Y
Yijie Huo
Researcher at Stanford University
Publications - 107
Citations - 2979
Yijie Huo is an academic researcher from Stanford University. The author has contributed to research in topics: Solar cell & Thin film. The author has an hindex of 25, co-authored 107 publications receiving 2575 citations.
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Journal ArticleDOI
Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30
Jieyang Jia,Linsey C. Seitz,Jesse D. Benck,Yijie Huo,Yusi Chen,Jia Wei Desmond Ng,Jia Wei Desmond Ng,Taner Bilir,James S. Harris,Thomas F. Jaramillo +9 more
TL;DR: A photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of the knowledge, is reported.
Journal ArticleDOI
Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
TL;DR: In this paper, the authors synthesize up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy.
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Electrically driven subwavelength optical nanocircuits
Kevin C. Y. Huang,Kevin C. Y. Huang,Min-Kyo Seo,Min-Kyo Seo,Tomas Sarmiento,Yijie Huo,James S. Harris,Mark L. Brongersma +7 more
TL;DR: In this article, an integrated nanoscale light-emitting diode is used as an electrically driven optical source for exciting two-dimensional localized gap plasmon waveguides with a 0.016λ2 cross-sectional area.
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Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
Yijie Huo,Hai Lin,Robert Chen,Maria Makarova,Yiwen Rong,Mingyang Li,Theodore I. Kamins,Jelena Vuckovic,James S. Harris +8 more
TL;DR: In this article, high tensile-strained layers of Ge were grown via molecular beam epitaxy using step-graded InxGa1−xAs buffer layers on (100) GaAs.
Journal ArticleDOI
Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
TL;DR: In this paper, the dilational and shear deformation potentials of the direct band gap of Ge1−xSnx alloys were calculated. And the lowest transition energies from photoreflectance were consistent with the energies derived from photoluminescence.