Y
Yong P. Chen
Researcher at Purdue University
Publications - 363
Citations - 18174
Yong P. Chen is an academic researcher from Purdue University. The author has contributed to research in topics: Graphene & Topological insulator. The author has an hindex of 62, co-authored 348 publications receiving 16280 citations. Previous affiliations of Yong P. Chen include E Ink Corporation & University of Oxford.
Papers
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Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
Yang Xu,Ireneusz Miotkowski,Chang Liu,Jifa Tian,Hyoungdo Nam,Nasser Alidoust,Jiuning Hu,Chih-Kang Shih,M. Zahid Hasan,Yong P. Chen +9 more
TL;DR: In this paper, the predicted half-integer quantum Hall effect was observed using the topological insulator BiSbTeSe2, which exhibits topological surface states at room temperature, with each surface contributing a half quantum of Hall conductance.
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Electrically Tunable Damping of Plasmonic Resonances with Graphene
Naresh Kumar Emani,Ting-Fung Chung,Xingjie Ni,Alexander V. Kildishev,Yong P. Chen,Alexandra Boltasseva +5 more
TL;DR: Electrical control of a plasmonic resonance at infrared frequencies using large-area graphene is demonstrated and full-wave simulations, where graphene is modeled as a 1 nm thick effective medium, show excellent agreement with experimental results.
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Rational synthesis of ultrathin n-type Bi2Te3 nanowires with enhanced thermoelectric properties.
TL;DR: The uniformity and high yield of the nanowires provide a promising route to make significant contributions to the manufacture of nanotechnology-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliable and a reproducible way.
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Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements
TL;DR: In this paper, the intensity ratio between Raman 'D' and 'G' peaks, ID/IG (commonly used to characterize disorder in graphene), is observed to initially increase almost linearly with the number (Ne) of plasma-etching pulses, but later decreases at higher Ne values.
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Wafer-scale synthesis of graphene by chemical vapor deposition and its application in hydrogen sensing
Wei Wu,Wei Wu,Zhihong Liu,Luis A. Jauregui,Qingkai Yu,Qingkai Yu,Rajeev Pillai,Helin Cao,Jiming Bao,Yong P. Chen,Shin-Shem Pei,Shin-Shem Pei +11 more
TL;DR: In this paper, the authors used a 4 mm × 3 mm size graphene film with a 1 nm palladium film deposited for hydrogen detection and showed high sensitivity, fast response and recovery, and can be used with multiple cycles.