Youn Seon Kang

TL;DR: In this paper, a C60 layer between the phase change material and the metal electrode was added to phase change random access memory (PRAM) to reduce the heat dissipation and the operating current.

TL;DR: In this article, the authors measured pseudodielectric functions in the visible-deep ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x=0.56, 0.82) (PZT), Pb0.96O3, Pb 0.91La0.09(Zr0.65Ti0.35)0.98Nb0

TL;DR: In this paper, the authors measured the dielectric functions of pseudobinary thin films by using spectroscopic ellipsometry and obtained the optical transition (critical point) energies of the amorphous (crystalline) thin films.

TL;DR: In this article, the authors show that nanometer scale Ge2Sb2Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180°C show remarkable suppression in electrical and thermal conductivity.

TL;DR: Yoon et al. as discussed by the authors examined the electrical properties of Ge2Sb2Te5 (GST) nanoparticles for phase-change memory applications and found that they have reversible nonvolatile switching characteristics between a high resistance state and a low resistance state.