Y
Yu Zhu
Researcher at IBM
Publications - 47
Citations - 3020
Yu Zhu is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Graphene. The author has an hindex of 18, co-authored 47 publications receiving 2756 citations.
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Journal ArticleDOI
High-frequency, scaled graphene transistors on diamond-like carbon
Yanqing Wu,Yu-Ming Lin,Ageeth A. Bol,Keith A. Jenkins,Fengnian Xia,Damon B. Farmer,Yu Zhu,Phaedon Avouris +7 more
TL;DR: The systematic study of top-gated CVD-graphene r.f. transistors for radio-frequency applications and the cut-off frequency was found to scale as 1/(gate length), providing a much larger operation window than is available for conventional devices.
Journal ArticleDOI
Structure and Electronic Transport in Graphene Wrinkles
Wenjuan Zhu,Tony Low,Vasili Perebeinos,Ageeth A. Bol,Yu Zhu,Hugen Yan,Jerry Tersoff,Phaedon Avouris +7 more
TL;DR: Calculations of the energetics explain the morphological transition and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes, consistent with transport simulations.
Journal ArticleDOI
State-of-the-art graphene high-frequency electronics.
Yanqing Wu,Keith A. Jenkins,Alberto Valdes-Garcia,Damon B. Farmer,Yu Zhu,Ageeth A. Bol,Christos D. Dimitrakopoulos,Wenjuan Zhu,Fengnian Xia,Phaedon Avouris,Yu-Ming Lin +10 more
TL;DR: D devices with intrinsic cutoff frequency above 300 GHz are reported, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material.
Journal ArticleDOI
End-bonded contacts for carbon nanotube transistors with low, size-independent resistance.
Qing Cao,Shu-Jen Han,Jerry Tersoff,Aaron D. Franklin,Yu Zhu,Zhen Zhang,George S. Tulevski,Jianshi Tang,Wilfried Haensch +8 more
TL;DR: A single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side- bonded or planar contact schemes is reported.
Journal ArticleDOI
Carbon nanotube transistors scaled to a 40-nanometer footprint
TL;DR: A p-channel transistor scaled to such an extremely small dimension is reported on, built on one semiconducting carbon nanotube, which occupies less than half the space of leading silicon technologies, while delivering a significantly higher pitch-normalized current density.