P
Phaedon Avouris
Researcher at IBM
Publications - 78
Citations - 7352
Phaedon Avouris is an academic researcher from IBM. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 39, co-authored 78 publications receiving 6963 citations. Previous affiliations of Phaedon Avouris include Center for Advanced Materials & GlobalFoundries.
Papers
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Journal ArticleDOI
Photocurrent imaging and efficient photon detection in a graphene transistor
Fengnian Xia,Thomas Mueller,Roksana Golizadeh-Mojarad,Marcus Freitag,Yu-Ming Lin,James C. Tsang,Vasili Perebeinos,Phaedon Avouris +7 more
TL;DR: It is shown that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than one-third of the total channel length from both source and drain sides; hence, most of the channel is affected by the metal.
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Structure and Electronic Transport in Graphene Wrinkles
Wenjuan Zhu,Tony Low,Vasili Perebeinos,Ageeth A. Bol,Yu Zhu,Hugen Yan,Jerry Tersoff,Phaedon Avouris +7 more
TL;DR: Calculations of the energetics explain the morphological transition and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes, consistent with transport simulations.
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Chemical doping and electron-hole conduction asymmetry in graphene devices.
Damon B. Farmer,Roksana Golizadeh-Mojarad,Vasili Perebeinos,Yu-Ming Lin,George S. Tulevski,James C. Tsang,Phaedon Avouris +6 more
TL;DR: Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry in transport in graphene devices doped with poly(ethylene imine) and diazonium salts is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.
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Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
TL;DR: In this paper, an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors was used to preserve high field effect mobilities in top gate operation.
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Energy dissipation in graphene field-effect transistors.
Marcus Freitag,Mathias Steiner,Yves Martin,Vasili Perebeinos,Zhihong Chen,James C. Tsang,Phaedon Avouris +6 more
TL;DR: In this paper, the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band was measured, and it was shown that remote scattering by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene.