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Yuan Gao
Researcher at Agency for Science, Technology and Research
Publications - 238
Citations - 7803
Yuan Gao is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Quantum dot & Perovskite (structure). The author has an hindex of 38, co-authored 200 publications receiving 5017 citations. Previous affiliations of Yuan Gao include University of Toronto & Taizhou University.
Papers
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Proceedings ArticleDOI
A 3.54nJ/bit UWB front-end in 0.18-µm CMOS
TL;DR: A 3.54 nJ/bit receiver front-end for 3–5 GHz impulse radio UWB is proposed in this paper and current-reuse technique is employed in the LNA to reduce the power consumption while achieving high gain.
Journal ArticleDOI
Virus-induced interference as a means for accelerating fitness-based selection of cyprinid herpesvirus 3 single-nucleotide variants in vitro and in vivo
Yuan Gao,Arun Sridhar,Noah Bernard,Bo He,Haiyan Zhang,Sébastien Pirotte,S. Desmecht,Catherine Vancsok,Maxime Boutier,Nicolás M. Suárez,Andrew J. Davison,Owen H. Donohoe,Alain Vanderplasschen +12 more
TL;DR: In this article , a comparison of the sequences of virion transmembrane protein genes in CyHV-3 strains, and the use of various recombinant viruses, demonstrated that this trait is linked to a single-nucleotide polymorphism (SNP) in the open reading frame (ORF) 131 coding sequence (C225791T mutation) that results in codon 183 encoding either an alanine (183A) or a threonine(183T) residue.
Proceedings ArticleDOI
Coherent Random lasing from CdSe/CdS/ZnS quantum dots
TL;DR: In this article, coherent random lasing from self-assembled clusters of CdSe/CdS/ZnS QDs with relatively low threshold of 0.7 mJ/cm2 was demonstrated.
Proceedings ArticleDOI
A 1800μm2, 953Gbps/W AES Accelerator for IoT Applications in 40nm CMOS
TL;DR: In this article , a compact and energy-efficient AES accelerator for area and power-constrained IoT applications was fabricated in a 40nm CMOS process, which reduced the total flip-flops to only 269 bits.
Proceedings ArticleDOI
The link between NBTI and TDDB of high-k gate P-MOSFETs
Yuan Gao,Diing Shenp Ang +1 more
TL;DR: In this paper, the relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs was examined and it was shown that the conversion of switching hole traps into permanent trapped holes will correspond to a degradation of the TDDB lifetime.