Y
Yuchao Yang
Researcher at Peking University
Publications - 146
Citations - 8909
Yuchao Yang is an academic researcher from Peking University. The author has contributed to research in topics: Neuromorphic engineering & Memristor. The author has an hindex of 34, co-authored 118 publications receiving 6533 citations. Previous affiliations of Yuchao Yang include Tsinghua University & University of Michigan.
Papers
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Journal ArticleDOI
Memristive Devices and Networks for Brain-Inspired Computing
TL;DR: A review is provided on existing approaches for the implementation of artificial synapses and neurons based on memristive devices; and the respective advantages and disadvantages of these approaches are evaluated.
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Dual-Gated MoS2 Neuristor for Neuromorphic Computing
Lin Bao,Jiadi Zhu,Zhizhen Yu,Rundong Jia,Qifeng Cai,Zongwei Wang,Liying Xu,Yanqing Wu,Yuchao Yang,Yimao Cai,Ru Huang +10 more
TL;DR: The MoS2 neuristor provides viable solutions for future reconfigurable neuromorphic systems and can be a promising candidate for future neuromorphic computing.
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Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic
TL;DR: It is demonstrated that a type of vertical 3‐terminal oxide based nanoionic device capable of implementing heterosynaptic plasticity and nonvolatile Boolean logic simultaneously is demonstrated, implying in‐memory computing potentialities.
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Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications
Qingyu Chen,Min Lin,Zongwei Wang,Xiaolong Zhao,Yimao Cai,Qi Liu,Yichen Fang,Yuchao Yang,Ming He,Ru Huang +9 more
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Improvement of HfO x -Based RRAM Device Variation by Inserting ALD TiN Buffer Layer
TL;DR: In this paper, the impacts introduced by oxygen-scavenging metal (Ti), including forming voltages variation and resistances dispersion in high/low states of HfO x -based RRAM devices, were investigated.