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Yuchao Yang

Researcher at Peking University

Publications -  146
Citations -  8909

Yuchao Yang is an academic researcher from Peking University. The author has contributed to research in topics: Neuromorphic engineering & Memristor. The author has an hindex of 34, co-authored 118 publications receiving 6533 citations. Previous affiliations of Yuchao Yang include Tsinghua University & University of Michigan.

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Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

TL;DR: In this paper, the characterization efforts on resistive switching devices to date, with emphasis on direct transmission electron microscopy observations on conducting filament formation and growth dynamics, are discussed and challenges to be addressed and advances that are needed to further our understanding of dynamic ionic, electronic, and structural effects involved in the RS process.
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Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons.

TL;DR: The final results show that the artificial retina can extract shape information from the image and transfer it into spike frequency realizing the function of computing in sensor.
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Electrochemical and thermodynamic processes of metal nanoclusters enabled biorealistic synapses and leaky-integrate-and-fire neurons

TL;DR: A two-terminal memristive synapse is reported that can realize short-term and long-term plasticity in both potentiation and depression processes, paving the way for the construction of intelligent neuromorphic systems capable of encoding and processing spatiotemporal information.
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A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio

TL;DR: A novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized for the first time, which can effectively suppress the sub-threshold slope (SS) degradation without leakage current increase through self-adaptively current replenishing with bandgap engineering, greatly alleviating the critical issue of high average SS in conventional TFETs.
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Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications

TL;DR: In this article, a physically transient true random number generator based on magnesium oxide volatile threshold switches was proposed, taking advantage of the volatile nature in switching, a reset operation is not required in each cycle and the operation is largely simplified.