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Yuchao Yang

Researcher at Peking University

Publications -  146
Citations -  8909

Yuchao Yang is an academic researcher from Peking University. The author has contributed to research in topics: Neuromorphic engineering & Memristor. The author has an hindex of 34, co-authored 118 publications receiving 6533 citations. Previous affiliations of Yuchao Yang include Tsinghua University & University of Michigan.

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Building Neuromorphic Circuits with Memristive Devices

TL;DR: An increasing number of computing tasks today are related to handling large amounts of data, e.g. image processing as an example, and alternative approaches such as bio-inspired neuromorphic circuits, with distributed computing and localized storage in networks, become attractive options.
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Random telegraph noise and resistance switching analysis of oxide based resistive memory

TL;DR: The findings of this study reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.
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Enhanced electromechanical response of Fe-doped ZnO films by modulating the chemical state and ionic size of the Fe dopant

TL;DR: In this article, the relationship between the electromechanical response of doped ZnO and the dopant ionic size, the chemical state and ionic radius of Fe in Fe-ZnO films were modulated through doping with various Fe concentrations and postannealing.
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Roadmap on emerging hardware and technology for machine learning.

Karl K. Berggren, +47 more
- 01 Jan 2021 - 
TL;DR: The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.
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Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating

TL;DR: In this article, the bipolar resistive switching (RS) behavior of ZnO dielectric films was investigated for nonvolatile resistive memory applications, and it was found that the voltage sweep cycles without efficient heat dissipation accelerate the hard dielectrics breakdown of the device, reflecting the impact of accumulative Joule heating.