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Yuchao Yang
Researcher at Peking University
Publications - 146
Citations - 8909
Yuchao Yang is an academic researcher from Peking University. The author has contributed to research in topics: Neuromorphic engineering & Memristor. The author has an hindex of 34, co-authored 118 publications receiving 6533 citations. Previous affiliations of Yuchao Yang include Tsinghua University & University of Michigan.
Papers
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Proceedings ArticleDOI
Accelerated Local Training of CNNs by Optimized Direct Feedback Alignment Based on Stochasticity of 4 Mb C-doped Ge 2 Sb 2 Te 5 PCM Chip in 40 nm Node
TL;DR: In this article, the inherent stochasticity in phase change memory fabricated in 40 nm node is exploited to build a merged random feedback matrix with reduced hardware cost, and the training time and energy consumptions of VGG-16 and LeNet-5 were reduced by 3× and 3.3×, respectively, compared with hardware-accelerated in-memory BP training.
Journal ArticleDOI
Spike-Enabled Audio Learning in Multilevel Synaptic Memristor Array-Based Spiking Neural Network
Journal ArticleDOI
Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing
Caidie Cheng,Caidie Cheng,Yanghao Wang,Liying Xu,Keqin Liu,Bingjie Dang,Yingming Lu,Xiaoqin Yan,Ru Huang,Yuchao Yang +9 more
Proceedings ArticleDOI
Nonvolatile memristor as a new platform for non-von Neumann computing
TL;DR: By combining the features of bipolar and unipolar memristors, the proposed circuits are able to execute both fundamental Boolean logic and arithmetic computing with high reconfigurability and high parallelism, which compares favorably with existing methods of in-memory logic based on memristor.
Journal ArticleDOI
Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application.
TL;DR: TiN/ZnO:Mn/Pt junctions, which employ a conductive compound TiN as the top electrode to replace regular metal electrodes, were fabricated and investigated for nonvolatile resistive memory applications and demonstrated to retain for more than 10(4) s without electrical power, demonstrating a nonvolatility nature of the memory device.