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Yudi Zhao
Researcher at Peking University
Publications - 31
Citations - 413
Yudi Zhao is an academic researcher from Peking University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 7, co-authored 28 publications receiving 265 citations. Previous affiliations of Yudi Zhao include Beijing Information Science & Technology University.
Papers
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Journal ArticleDOI
Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits.
Peng Huang,Jinfeng Kang,Yudi Zhao,Sijie Chen,Runze Han,Zheng Zhou,Zhe Chen,Wenjia Ma,Li Mu,Lifeng Liu,Xiaoyan Liu +10 more
TL;DR: Resistance switching devices have potential to offer computing and memory function and Resistance states stored in devices located in arbitrary positions of RS array can be performed various nonvolatile logic operations.
Journal ArticleDOI
Impacts of State Instability and Retention Failure of Filamentary Analog RRAM on the Performance of Deep Neural Network
Xiang Yachen,Peng Huang,Yudi Zhao,Meiran Zhao,Bin Gao,Huaqiang Wu,He Qian,Xiaoyan Liu,Jinfeng Kang +8 more
TL;DR: With the optimization method, the robustness of the FA-RRAM-based DNN is enhanced significantly in which no accuracy loss is observed even after 107s, and the accuracy loss caused by state instability and retention failure is mitigated.
Journal ArticleDOI
Modeling and Optimization of Bilayered TaO x RRAM Based on Defect Evolution and Phase Transition Effects
Yudi Zhao,Peng Huang,Zhe Chen,Chen Liu,Haitong Li,Bing Chen,Wenjia Ma,Feifei Zhang,Bin Gao,Xiaoyan Liu,Jinfeng Kang +10 more
TL;DR: In this article, a comprehensive physical model on the resistive switching behaviors of bilayered TaO x -based RS access memory [RRAM] is presented, and an atomistic Monte Carlo simulation method based on the model is developed to investigate the dynamic physical processes and reproduce the experimental phenomena.
Journal ArticleDOI
Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing
Yulin Feng,Peng Huang,Yudi Zhao,Yihao Shan,Yizhou Zhang,Zheng Zhou,Lifeng Liu,Xiaoyan Liu,Jinfeng Kang +8 more
TL;DR: In this paper, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array, which is mainly derived from the excessive oxygen vacancies generated by the abrupt SET process.
Journal ArticleDOI
Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique.
TL;DR: Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated and showed good uniformity and high reliability.