Y
Yujun Shi
Researcher at Lanzhou University
Publications - 7
Citations - 82
Yujun Shi is an academic researcher from Lanzhou University. The author has contributed to research in topics: Engineering & Chemistry. The author has an hindex of 1, co-authored 2 publications receiving 57 citations.
Papers
More filters
Journal ArticleDOI
Automatic Identification and Removal of Ocular Artifacts in EEG—Improved Adaptive Predictor Filtering for Portable Applications
TL;DR: A hybrid de-noising method combining Discrete Wavelet Transformation (DWT) and an Adaptive Predictor Filter (APF) based on an adaptive autoregressive model for prediction of the waveform of signals in the ocular artifact zones that is well suited to applications in portable environments.
Journal ArticleDOI
Formation of Au, Pt, and bimetallic Au–Pt nanostructures from thermal dewetting of single-layer or bilayer thin films
TL;DR: In this paper , the formation of bimetallic Au-Pt nanostructures by thermal dewetting of single-layer Au, Pt, and bilayer AuPt thin films on Si substrates was systematically studied.
Journal ArticleDOI
β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization
TL;DR: In this article , as-grown β-Ga2O3 nanostructures were analyzed using X-ray diffraction analysis, showing that they were highly pure single-phase β-GA 2O3 and the bandgap of the nanostructure was determined to lie in the range of 4.68-4.74 eV.
Journal ArticleDOI
Formation and Removal of Alloyed Bimetallic Au–Ag Nanoparticles from Silicon Substrates for Tunable Surface Plasmon Resonance
Journal ArticleDOI
Theoretical Study on the Decomposition Kinetics and Thermochemistry of Tetramethyldisilazane and Hexamethyldisilazane─Formation of Silanimine and Silene Species.
TL;DR: In this paper , the gas phase decomposition kinetics and thermochemistry of 1, 1,1,3, 3,3-hexamethyldisilazane (HMDSZ) and TMDSZ, two potential single-source precursors for the chemical vapor deposition of silicon carbonitride thin films, were systematically investigated using ab initio calculations at the B3LYP/6-311++G(d,p)//CCSD(T)/6- 311++G (d, p) level of theory.