Bo Fu

TL;DR: In this article, defects in β-Ga2O3 single crystals were summarized, including dislocations, voids, twin, and small defects, and their effects on device performance were discussed.

TL;DR: Highly narrow-band solar-blind photodetectors by light polarization engineering of the anisotropic transitions in β-Ga2O3 single crystals are presented and it is shown that direct transitions from valance subbands to the conduction band minimum are tuned between 4.53 and 4.76 eV.

TL;DR: In this article, a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio, was fabricated.

TL;DR: In this article, the performance of bilayer dielectric MOS capacitors with bilayer insulators was investigated through C − V and J − V measurement, which revealed that incoming high-k HfO2 makes both bilayer structures attain an increasing dielectrics constant, which means a better gate control ability in transistors comparing with single Al2O3.

TL;DR: In this paper, a Schottky barrier rectifier was fabricated with a (100)-oriented Ga2O3 substrate grown by the edge-defined film-fed method, which had an effective donor concentration of approximately $2\times 10^{17}$ cm−3.