Yuzheng Guo

TL;DR: In this article, the use of reactive electropositive metal contacts is proposed to lower contact resistance in MoS2 devices, based on calculations of the sulfur vacancy in the screened exchange (sX) hybrid functional.

TL;DR: The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose and the dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is covered.

Abstract: The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insulators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) is studied using different electrode materials, and a family of h-BN-based resistive random access memories with tunable capabilities is engineered. The devices show the coexistence of forming free bipolar and threshold-type RS with low operation voltages down to 0.4 V, high current on/off ratio up to 106, and long retention times above 10 h, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which are more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistence of bipolar and threshold RS, which may open the door to additional functionalities and applications.

TL;DR: The large work function of MoO3 is due to its closed shall character and the dipole layer created by planes of terminal O1 oxygen sites which lower the electrostatic potential of the inner Mo-O units as mentioned in this paper.