Zhifang Cao

TL;DR: Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the currentvoltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) at low drain-source voltage, Wang et al. as mentioned in this paper found that the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas (2DEG) electron mobility.

TL;DR: In this paper, the Ni Schottky barrier height at zero bias has been calculated by self-consistently solving Schrodinger's and Poisson's equations, and the correlation expression between the barrier height in zero electric field and the barrier heights in zero bias was derived.

TL;DR: Using the measured capacitance-voltage curves of Ni Schottky contacts with different areas and the currentvoltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) with the side-Ohmic contacts, the authors in this article found that the polarization Coulomb field scattering caused by the polarization charge density variation at the Ohmic-contact processing is closely related to the interface processing.

TL;DR: In this article, both circular and rectangular Ni Schottky contacts on AlGaN/AlN/GaN heterostructures have been fabricated and the flat-band voltage was analyzed and obtained from the forward currentvoltage (I-V) characteristics.

TL;DR: It is found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance, and polarization Coulomb field scattering dominates electron mobility.