Showing papers in "arXiv: Mesoscale and Nanoscale Physics in 2004"
TL;DR: In this article, the authors describe the properties of Si-inversion layers in GaAs-AlGaAs Heterostructures and the Quantum Hall Effect in strong magnetic fields.
Abstract: I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties).
II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential).
III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling).
IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).
937 citations
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TL;DR: In this article, the authors discuss how qubit decoherence is affected by the intrinsic noise of the Josephson tunnel junction and what can be done to improve it, and propose a new design of superconducting qubits based on multi-junction circuits.
Abstract: Superconducting qubits are solid state electrical circuits fabricated using techniques borrowed from conventional integrated circuits. They are based on the Josephson tunnel junction, the only non-dissipative, strongly non-linear circuit element available at low temperature. In contrast to microscopic entities such as spins or atoms, they tend to be well coupled to other circuits, which make them appealling from the point of view of readout and gate implementation. Very recently, new designs of superconducting qubits based on multi-junction circuits have solved the problem of isolation from unwanted extrinsic electromagnetic perturbations. We discuss in this review how qubit decoherence is affected by the intrinsic noise of the junction and what can be done to improve it.
258 citations
TL;DR: In this paper, the parabolic effective-mass model with bulk effective-masses significantly overestimates SNWT threshold voltages when the wire width is < 3nm, and ON-currents when the wires width is ≥ 5nm.
Abstract: This paper examines the validity of the widely-used parabolic effective-mass approximation for computing the current-voltage (I-V) characteristics of silicon nanowire transistors (SNWTs). The energy dispersion relations for unrelaxed Si nanowires are first computed by using an sp3d5s* tight-binding model. A semi-numerical ballistic FET model is then adopted to evaluate the I-V characteristics of the (n-type) SNWTs based on both a tight-binding dispersion relation and parabolic energy bands. In comparison with the tight-binding approach, the parabolic effective-mass model with bulk effective-masses significantly overestimates SNWT threshold voltages when the wire width is <3nm, and ON-currents when the wire width is <5nm. By introducing two analytical equations with two tuning parameters, however, the effective-mass approximation can well reproduce the tight-binding I-V results even at a \~1.36nm wire with.
141 citations
TL;DR: In this article, a general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach, and the full three-dimensional transport problem is described in terms of coupled transverse subband modes which arise due to quantum confinement along the body thickness direction.
Abstract: The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes which arise due to quantum confinement along the body thickness direction. Couplings among the subbands are generated for two reasons: due to spatial variations of the confinement potential along the transport direction, and due to non-alignment of the device coordinate system with the principal axes of the constant energy conduction band ellipsoids. The problem simplifies considerably if the electrostatic potential is separable along transport and confinement directions, and further if the potential variations along the transport direction are slow enough to prevent dipolar coupling (Zener tunneling) between subbands. In this limit, the transport problem can be solved by employing two unitary operators to transform an arbitrarily oriented constant energy ellipsoid into a regular ellipsoid with principal axes along the transport, width and confinement directions of the device. The effective masses for several technologically important wafer orientations for silicon and germanium are calculated in this paper.
114 citations
TL;DR: In this article, the authors developed a theory for the full counting statistics for a class of nanoelectromechanical systems (NEMS), describable by a Markovian generalized master equation.
Abstract: We develop a theory for the full counting statistics (FCS) for a class of nanoelectromechanical systems (NEMS), describable by a Markovian generalized master equation. The theory is applied to two specific examples of current interest: vibrating C60 molecules and quantum shuttles. We report a numerical evaluation of the first three cumulants for the C60-setup; for the quantum shuttle we use the third cumulant to substantiate that the giant enhancement in noise observed at the shuttling transition is due to a slow switching between two competing conduction channels. Especially the last example illustrates the power of the FCS.
98 citations
TL;DR: It is found that the molecule-lead coupling, electron transfer, and conductance all depend strongly on the adsorption site, lead orientation, and local contact atomic configuration.
Abstract: Combining density functional theory calculations for molecular electronic structure with a Green function method for electron transport, we calculate from first principles the molecular conductance of benzene connected to two Au leads through different anchoring atoms -- S, Se, and Te. The relaxed atomic structure of the contact, different lead orientations, and different adsorption sites are fully considered. We find that the molecule-lead coupling, electron transfer, and conductance all depend strongly on the adsorption site, lead orientation, and local contact atomic configuration. For flat contacts the conductance decreases as the atomic number of the anchoring atom increases, regardless of the adsorption site, lead orientation, or bias. For small bias this chemical trend is, however, dependent on the contact atomic configuration: an additional Au atom at the contact with the (111) lead changes the best anchoring atom from S to Se although for large bias the original chemical trend is recovered.
77 citations
TL;DR: In this paper, the background charge fluctuation in a GaAs quantum dot device was investigated by measuring 1/f noise in the single-electron tunneling current through the dot.
Abstract: We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot.
75 citations
TL;DR: In this article, the authors proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa dielectric SrTiO3/Si substrates decreases or eliminates the Schottky barrier.
Abstract: Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.
73 citations
TL;DR: In this paper, the anomalous Hall effect for the double exchange model with the exchange coupling $|J_H|$ being smaller than the bandwidth $|t|$ for the purpose of clarifying the following unresolved and confusing issues: (i) the effect of the underlying lattice structure, (ii) the relation between AHE and the skyrmion number, (iii) the duality between real and momentum spaces, and (iv) the role of disorder scatterings; which is more essential, $\sigma_H$ (Hall conductivity)
Abstract: We study the anomalous Hall effect (AHE) for the double exchange model with the exchange coupling $|J_H|$ being smaller than the bandwidth $|t|$ for the purpose of clarifying the following unresolved and confusing issues: (i) the effect of the underlying lattice structure, (ii) the relation between AHE and the skyrmion number, (iii) the duality between real and momentum spaces, and (iv) the role of the disorder scatterings; which is more essential, $\sigma_H$ (Hall conductivity) or $\rho_H$ (Hall resistivity)? Starting from a generic expression for $\sigma_H$, we resolve all these issues and classify the regimes in the parameter space of $J_H \tau$ ($\tau$: elastic-scattering time), and $\lambda_{s}$ (length scale of spin texture). There are two distinct mechanisms of AHE; one is characterized by the real-space skyrmion-number, and the other by momentum-space skyrmion-density at the Fermi level, which work in different regimes of the parameter space.
71 citations
TL;DR: In this paper, a general study of oscillations in suspended one-dimensional elastic systems clamped at each end, exploring a wide range of slack (excess length) and downward external forces, is presented.
Abstract: We present a general study of oscillations in suspended one-dimensional elastic systems clamped at each end, exploring a wide range of slack (excess length) and downward external forces. Our results apply directly to recent experiments in nanotube and silicon nanowire oscillators. We find the behavior to simplify in three well-defined regimes which we present in a dimensionless phase diagram. The frequencies of vibration of such systems are found to be extremely sensitive to slack.
60 citations
TL;DR: In this article, the authors show that unless materials with extremely strong spin orbit interaction can be developed, the spintronic devices will not measure up to their electronic counterparts, and they also show that some recently proposed modifications of the original spin field effect transistor concept of Datta and Das [Appl. Phys. Lett., Vol. 56, 665 (1990)] actually lead to worse performance than the original construct.
Abstract: Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin orbit interaction can be developed, the spintronic devices will not measure up to their electronic cousins. We also show that some recently proposed modifications of the original spin field effect transistor concept of Datta and Das [Appl. Phys. Lett., Vol. 56, 665 (1990)] actually lead to worse performance than the original construct.
TL;DR: In this paper, electrical transport measurements in a carbon nanotube quantum dot coupled to a normal and a superconducting lead were performed and it was shown that the zero bias conductance resonance either splits into two side peaks or persists.
Abstract: We report on electrical transport measurements in a carbon nanotube quantum dot coupled to a normal and a superconducting lead. Depending on the ratio of Kondo temperature $T_{K}$ and superconducting gap $\Delta$ the zero bias conductance resonance either is split into two side-peaks or persists. We also compare our data with a simple model of a resonant level - superconductor interface.
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TL;DR: In this paper, high performance p-and n-type single-walled carbon nanotube (SWNT) field effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively.
Abstract: High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to chemically intrinsic SWNTs, with no or small Schottky barriers (SB), afford high ON-state currents up to 20 uA per tube. The lack of significant Fermi-level pinning at the nanotube-metal interfaces allows for fine-tuning of the barrier heights for p-and n-channel conductions by changing the contact metals. The air-stable p- and n-FETs thus obtained can be used for complementary nanoelectronics, as demonstrated with the fabrication of an inverter. Other important issues regarding nanotube FETs including hysteresis, OFF-state leak currents, choice of nanotube diameter, and threshold voltage control are discussed.
TL;DR: A review of coherent and collective quantum optical effects like superradiance and coherent population trapping in mesoscopic systems is presented in this paper, with a focus on their role for electronic transport and quantum dissipation.
Abstract: A review of coherent and collective quantum optical effects like superradiance and coherent population trapping in mesoscopic systems is presented. Various new physical realizations of these phenomena are discussed, with a focus on their role for electronic transport and quantum dissipation in coupled nano-scale systems like quantum dots. A number of theoretical tools such as Master equations, polaron transformations, correlation functions, or level statistics are used to describe recent work on dissipative charge qubits (double quantum dots), the Dicke effect, phonon cavities, single oscillators, dark states and adiabatic control in quantum transport, and large spin-boson models. The review attempts to establish connections between concepts from Mesoscopics (quantum transport, coherent scattering, quantum chaos), Quantum Optics (such as superradiance, dark states, boson cavities), and (in its last part) Quantum Information Theory.
TL;DR: In this paper, the spin precession induced by the Aharonov-Casher phase was studied and it was shown that the spin-polarized current and its polarizability can be controlled by the electric field.
Abstract: We investigate quantum spin transport in a structure of conducting ring, embedded in textured electric field, with two leads, and obtain an exact solution for the problem. The spin precession induced by the Aharonov-Casher phase is studied. It is shown that the spin-polarized current and its polarizability can be controlled by the electric field. As a result the polarizability is a function of the geometric phase which originates from the spin-orbital interaction in the ring.
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TL;DR: In this paper, the joint distribution function of the real and imaginary parts of the local Green function for a system with chaotic internal wave scattering and a uniform energy loss (absorption) was found for a microwave cavity attached to a single-mode antenna.
Abstract: We are interested in finding the joint distribution function of the real and imaginary parts of the local Green function for a system with chaotic internal wave scattering and a uniform energy loss (absorption) For a microwave cavity attached to a single-mode antenna the same quantity has a meaning of the complex cavity impedance Using the random matrix approach, we relate its statistics to that of the reflection coefficient and scattering phase and provide exact distributions for systems with beta=2 and beta=4 symmetry class In the case of beta=1 we provide an interpolation formula which incorporates all known limiting cases and fits excellently available experimental data as well as diverse numeric tests
TL;DR: In this article, an analogous modulator is proposed where the modulation is carried out by tuning the Dresselhaus spin orbit interaction instead, the advantage of which is that there is no magnetic field in the channel unlike in the case of the Datta-Das device.
Abstract: There is significant current interest in spintronic devices fashioned after a spin analog of the electro-optic modulator proposed by Datta and Das [Appl. Phys. Lett., \underline{56}, 665 (1990)]. In their modulator, the ``modulation'' of the spin polarized current is carried out by tuning the Rashba spin-orbit interaction with a gate voltage. Here, we propose an analogous modulator where the modulation is carried out by tuning the Dresselhaus spin orbit interaction instead. The advantage of the latter is that there is no magnetic field in the channel unlike in the case of the Datta-Das device. This can considerably enhance modulator performance.
TL;DR: In this paper, a simple and reliable method for making electrical contacts to small organic molecules with thiol endgroups is presented, where nanometer-scale gaps between metallic electrodes have been fabricated by passing a large current through a lithographically-patterned Au-line with appropriate thickness.
Abstract: We present a simple and reliable method for making electrical contacts to small organic molecules with thiol endgroups. Nanometer-scale gaps between metallic electrodes have been fabricated by passing a large current through a lithographically-patterned Au-line with appropriate thickness. Under appropriate conditions, the passage of current breaks the Au-line, creating two opposite facing electrodes separated by a gap comparable to the length of small organic molecules. Current-voltage characteristics have been measured both before and after deposition of short organic molecules. The resistance of single 1,4-benzenedithiol and 1,4-bezenedimethanedithiol molecules were found to be 9M$\Omega$ and 26M$\Omega$, respectively. The experimental results indicate strong electronic copuling to the contacts and are discussed using a relatively simple model of mesoscopic transport. The use of electrodes formed on an insulating surface by lithography and electromigration provides a stable structure suitable for integrated circuit applications.
TL;DR: In this article, the authors derived the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green's function in the sequential tunneling regime.
Abstract: We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green's function in the sequential tunneling regime. Basing on these equations, we investigate time-dependent resonant tunneling under a small amplitude irradiation and find that the resonant photon-assisted tunneling peaks in photocurrent demonstrate a combination behavior of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by threading the magnetic flux inside this device.
TL;DR: In this paper, the micro-SQUID response of a molecular system to electromagnetic radiation was studied and it was shown that the line width essentially results from intra-molecular hyperfine interaction.
Abstract: We report the first study of the micro-SQUID response of a molecular system to electromagnetic radiation. The advantages of our micro-SQUID technique in respect to pulsed electron paramagnetic resonance (EPR) techniques consist in the possibility to perform time-resolved experiments (below 1 ns) on submicrometer sizes samples (about 1000 spins) at low temperature (below 100 mK).
Resonant photon absorption in the GHz range was observed via low temperature micro-SQUID magnetization measurements of the spin ground state S = 1/2 of the molecular complex V15. The line-width essentially results from intra-molecular hyperfine interaction. The results point out that observing Rabi oscillations in molecular nanomagnets requires well isolated low spin systems and high radiation power. Our first results open the way for time-resolved observations of quantum superposition of spin-up and spin-down states in SMMs.
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TL;DR: In this paper, the authors describe a two-dimensional graphite-graphite system which exhibits a pronounced electric field effect, such that carriers in the conductive channel can be turned into either electrons or holes.
Abstract: The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a semiconductor device and, consequently, change an electric current through it. As the semiconductor industry is nearing the limits of performance improvements for the current technologies dominated by silicon, there is a constant search for new, non-traditional materials whose properties can be controlled by electric field. Most notable examples of such materials developed recently are organic conductors [1], oxides near a superconducting or magnetic phase transition [2] and carbon nanotubes [3-5]. Here, we describe another system of this kind - thin monocrystalline films of graphite - which exhibits a pronounced electric field effect, such that carriers in the conductive channel can be turned into either electrons or holes. The films remain metallic, continuous and of high quality down to a few atomic layers in thickness. The demonstrated ease of preparing such films of nearly macroscopic sizes and of their processing by standard microfabrication techniques, combined with submicron-scale ballistic transport even at room temperature, offer a new two-dimensional system controllable by electric-field doping and provide a realistic promise of device applications.
TL;DR: In this article, electrical spin injection measurements on MWNTs were carried out using a ferromagnetic alloy Pd$1-x}$Ni$x} with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k/Omega at 300 $K.
Abstract: We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device resistances below 100 $k\Omega$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
TL;DR: In this article, a vision of ferromagnet/semiconductor hybrid as a strongly coupled but flexible spin system is presented, where the magnetism of the hybrid (magnetic hysteresis loop and the orientation of magnetization vector in space) is tuned both optically and electrically with the help of semiconductor.
Abstract: Vision of ferromagnet/semiconductor hybrid as a strongly coupled but flexible spin system is presented. We analyze the experiments and argue that contrary to the common sense the nonmagnetic semiconductor plays a crucial role in manipulating of ferromagnetism. The magnetism of the hybrid (magnetic hysteresis loop and the orientation of magnetization vector in space) is tuned both optically and electrically with the help of semiconductor. As a result the hybrid represents an elementary magnetic storage with electronic record and readout
TL;DR: In this article, the effect of vibrational excitation on the transmission probability for different parameter regimes was investigated, based on a mechanistic model for a biphenyl molecule between two metal electrodes.
Abstract: Vibrationally inelastic electron transport through a flexible molecular junction is investigated. The study is based on a mechanistic model for a biphenyl molecule between two metal electrodes. Employing methods from electron-molecule scattering theory, which allow a numerically exact treatment, we study the effect of vibrational excitation on the transmission probability for different parameter regimes. The current-voltage characteristic is analyzed for different temperatures, based on a Landauer-type formula. Furthermore, the process of electron assisted tunneling between adjacent wells in the torsional potential of the molecule is discussed and the validity of approximate methods to describe the transmission probability is investigated.
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TL;DR: In this article, the buckling potential of buckling nanobars has been investigated and different designs of nanomechanical qubits have been proposed, and a comparison between the well studied charge and flux superconducting qubits suggests several experimental setups which could be realized using available technology.
Abstract: We propose a mechanical qubit based on buckling nanobars--a NEMS so small as to be quantum this http URL establish buckling nanobars as legitimate candidates for qubits, we calculate the effective buckling potential that produces the two-level system and identify the tunnel coupling between the two local states. We propose different designs of nanomechanical qubits and describe how they can be manipulated. Also we outline possible decoherence channels and detection schemes. A comparison between the well studied charge and flux superconducting qubits suggests several experimental setups which could be realized using available technology.
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TL;DR: In this paper, the performance of nanotubes and nanowires as antennas is analyzed, including the radiation resistance, the input reactance and resistance, and antenna efficiency, as a function of frequency and nanotube length.
Abstract: We present quantitative predictions of the performance of nanotubes and nanowires as antennas, including the radiation resistance, the input reactance and resistance, and antenna efficiency, as a function of frequency and nanotube length. Particular attention is paid to the quantum capacitance and kinetic inductance. In so doing, we also develop a circuit model for a transmission line made of two parallel nanotubes, which has applications for nano-interconnect technology.
TL;DR: In this article, Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers.
Abstract: Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers. The fabrication process includes electron beam lithography, dry etching, anodization, and planarization by chemical-mechanical polishing. The samples were characterized at temperatures down to 25 mK. In general, all junctions are of high quality and their I-U characteristics show low leakage currents and high superconducting energy gap values of 1.35 meV. The characteristics of the transistors and arrays exhibit some features in the subgap area, associated with tunneling of Cooper pairs, quasiparticles and their combinations due to the redistribution of the bias voltage between the junctions. Total island capacitances of the transistor samples ranged from 1.5 fF to 4 fF, depending on the junction sizes. Devices made of junctions with linear dimensions below 100 nm by 100 nm demonstrate a remarkable single-electron behavior in both superconducting and normal state. We also investigated the area dependence of the junction capacitances for transistor and array samples.
TL;DR: In this article, it is theoretically demonstrated that a displacement of a pinned domain wall can be driven by use of an ac current which is below threshold value, and the point here is that finite motion around the pinning center by a low current is enhanced significantly by the resonance if the frequency is tuned close to the pining frequency.
Abstract: It is theoretically demonstrated that a displacement of a pinned domain wall, typically of order of $\mu$m, can be driven by use of an ac current which is below threshold value. The point here is that finite motion around the pinning center by a low current is enhanced significantly by the resonance if the frequency is tuned close to the pinning frequency as demonstrated by recent experiment.
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TL;DR: In this paper, a theoretical analysis of the zero-frequency and finite-frequency shot noise in electron tunneling through a two-level interacting system connected to two leads, when a coherent coupling between the two levels is present, was carried out by means of recently developed biasvoltage and temperature dependent quantum rate equations.
Abstract: In this paper, we carry out a theoretical analysis of the zero-frequency and finite-frequency shot noise in electron tunneling through a two-level interacting system connected to two leads, when a coherent coupling between the two levels is present, by means of recently developed bias-voltage and temperature dependent quantum rate equations. For this purpose, we generalize the traditional generation-recombination approach for shot noise of two-terminal tunneling devices properly to take into account the coherent superposition of different electronic states (quantum effects). As applications, analytical and numerical investigations have been given in detail for two cases: (1) electron tunneling through a quantum dot connected to ferromagnetic leads with intradot spin-flip scattering, and (2) spinless fermions tunneling through seriesly coupled quantum dots, focusing on the shot noise as functions of bias-voltage and frequency.
TL;DR: In this paper, the authors studied ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength α, and showed that due to destructive spin interferences the chain can be totaly opaque for certain ranges of k the width of which depends on the value of α.
Abstract: We study ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength \alpha. For a single ring the transmission and reflection coefficients are obtained analytically and from them the conductance for a chain of rings as a function of \alpha and of the wave vector k of the incident electron. We show that due to destructive spin interferences the chain can be totaly opaque for certain ranges of k the width of which depends on the value of \alpha. A periodic modulation of the strength \alpha or of the ring radius widens up the gaps considerably and produces a nearly binary conductance output.