S
Saurabh Lodha
Researcher at Indian Institute of Technology Bombay
Publications - 160
Citations - 3675
Saurabh Lodha is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Field-effect transistor & Doping. The author has an hindex of 28, co-authored 149 publications receiving 2767 citations. Previous affiliations of Saurabh Lodha include Center for Excellence in Education & Purdue University.
Papers
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Journal ArticleDOI
Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
TL;DR: A CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2 is reported, with physical characterization using SIMS, AFM, XRD and Raman techniques used to identify process conditions with reduced lattice defects as well as low surface damage and etching.
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Schottky barrier heights for Au and Pd contacts to MoS2
Naveen Kaushik,Ankur Nipane,Firdous Basheer,Sudipta Dubey,Sameer Grover,Mandar M. Deshmukh,Saurabh Lodha +6 more
TL;DR: In this paper, the Schottky barrier heights for Au and Pd contacts to MoS2 were obtained by analysing low temperature transistor characteristics and contact resistance data obtained using the transfer length method.
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Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sriram Krishnamoorthy,Zhanbo Xia,Chandan Joishi,Chandan Joishi,Yuewei Zhang,Joe McGlone,Jared M. Johnson,Mark Brenner,Aaron R. Arehart,Jinwoo Hwang,Saurabh Lodha,Siddharth Rajan +11 more
TL;DR: In this article, a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al 0.2Ga 0.8)2O3/Ga2O 3 heterojunction by silicon delta doping was confirmed using capacitance voltage measurements.
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Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy,Zhanbo Xia,Chandan Joishi,Yuewei Zhang,Joe McGlone,Jared M. Johnson,Mark Brenner,Aaron R. Arehart,Jinwoo Hwang,Saurabh Lodha,Siddharth Rajan +10 more
TL;DR: In this article, a modulation-doped two-dimensional electron gas (2DEG) channel was used to realize a modulationdoped field effect transistor (FET) at the beta(Al 0.2Ga 0.8)2O3/ Ga2O 3 heterojunction using silicon delta doping.
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Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics.
Abin Varghese,Abin Varghese,Abin Varghese,Dipankar Saha,Kartikey Thakar,Vishwas Jindal,Sayantan Ghosh,Nikhil V. Medhekar,Sandip Ghosh,Saurabh Lodha +9 more
TL;DR: Long term air-stability and facile single contact metal fabrication process make the multi-functional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronics.