Showing papers in "Critical Reviews in Solid State and Materials Sciences in 2013"

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

Abstract: Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-T c superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction, and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their ...

ZnS Nanostructures: Synthesis, Properties, and Applications

Abstract: Zinc sulfide (ZnS) nanostructures have attracted increasing attention due to their potential application in both conditional optical devices and new generation of nano-electronics and nano-optoelectronics because of their special structure-related chemical and physical properties. In this article, beginning with the synthesis of ZnS nanostructures with various original morphologies, we summarize the state-of-art research progresses on ZnS nanostructures. This is followed by the recent progresses on the improvement of their properties, especially the novel potentialapplications.Wehighlighttherecentachievementsonphotoluminescence,photocatalysis, light-emitting diodes (LEDs), field-effect transistors (FET), sensors, dye-sensitized solar cells, and field emission (FE) based on ZnS nanostructures. Finally, we present an outlook on the future development of ZnS nanostructures.

In Situ Studies on Reaction Mechanisms in Atomic Layer Deposition

Abstract: During the past decade, atomic layer deposition (ALD) has become an important thin-film deposition method in microelectronics industry, and it has also gained a lot of interest in many other areas, such as nanotechnology. The success of ALD is built on proper surface reactions. In this paper, in situ reaction mechanism studies on ALD processes are reviewed with the aim of building a general understanding on similarities and differences exhibited by various processes and process groups. Also, levels of understanding reaction mechanisms in ALD are discussed. The main methods used to study ALD chemistry in situ under typical process conditions are quadrupole mass spectrometry (QMS), quartz crystal microbalance (QCM), and infrared (IR) spectrometry. These are presented in detail in the review. Various other optical methods, ellipsometry in particular, have been used to study ALD processes too, but they provide little information about the reaction mechanisms. Competent in situ investigations solve the ALD rea...

Carbon Nanostructures in Lithium Ion Batteries: Past, Present, and Future

Abstract: Advent of nanotechnology has generated huge interest in application of carbon-based nanomaterials as a possible replacement for conventionally used graphite as anode of Li-ion batteries Future Li-ion batteries demand high capacity, energy, power, and better safety, while graphite falls short of fulfilling all these necessities Inspired by high conductivity, flexibility, surface area, and Li-ion insertion ability, a number of nano carbon materials, individually or as a composite, have been studied in detail to identify the best suitable material for next-generation energy storage devices Many of these nano-C-based structures hold good promise, although issues like density of nanomaterials and scalability are yet to be addressed with confidence This article aims to summarize the major research directions of nano-C materials in anodic application of Li-ion batteries and proposes possible future research directions in this widely studied field

Review on Atomic Layer Deposition and Applications of Oxide Thin Films

Abstract: Atomic layer deposition technique is able to grow conformal thin films over high aspect ratio structures. This article reviews the various aspects of oxides grown by this method including applications in photovoltaics and memristors. The main focus of this review is to concentrate on the oxides grown by atomic layer deposition and their growth mechanisms. The oxides deposited using atomic layer deposition are also likely to find application in memristor, an emerging field in the non volatile memories design with the ability to retain data and memory states even in power-off condition. The use of this technique to obtain oxides in surface modification of nanostructures gives the significance of these materials.

Progress in Modification of Indium-Tin Oxide/Organic Interfaces for Organic Light-Emitting Diodes

Abstract: The oxide/organic interfaces play crucial roles in the hole injection from the anode electrodes to the emitting organics in organic light-emitting diodes (OLEDs), and hence have strong impacts on the efficiencies and other properties of the devices. Indium-tin oxide (ITO) is currently the most popular anode material used in OLEDs due to several merits, such as good etch ability, good adherence, high transparency, low resistivity, and high work function. Interfacial engineering between the ITO electrode and the overlying organic layers is an important process to obtain the high performance of the diode devices. In this article, recent progress in modification of the ITO/organic interfaces is reviewed, as these interfaces are important to the development of the technologies aiming at improving the electroluminescence, and efficiencies as well as reducing the operation voltages of OLEDs. ITO/Organic interfacial properties can be controlled or modified by simply changing the surface properties of ITO using ch...

Fabrication, Microstructure, and Properties of Nanoporous Pd, Ni, and Their Alloys by Dealloying

Abstract: Nanoporous metals can be fabricated by dealloying, which is one of the reactions that occur during the corrosion of alloys. Nanoporous gold has been widely investigated for several decades, and it has recently been found that other metals, such as platinum, palladium, nickel, and copper, can form nanoporous structures through the dealloying of binary alloys. This article mainly shows fabrication and properties of nanoporous palladium and nickel after introduction of nanoporous metals by referring to nanoporous gold as an example. It is necessary to select binary alloys with suitable elements, in which the dissolution of the less noble element and the aggregation of the nobler element at the solid/electrolyte interface are simultaneously allowed. Postprocessing by thermal or acid treatment alters the nanoporous structure. Various properties of nanoporous metals (including mechanical, catalytic, piezoelectric, hydrogenation, and magnetic ones) are different from those of bulk and nanocrystalline materials a...

CVD-derived Hf-based High-k Gate Dielectrics

Abstract: Hf-based high-k gate dielectric has been recently highlighted as the most promising high-k dielectrics for the next-generation CMOS devices with high performance due to its excellent thermal stability and relatively high dielectric constant. This article provides a comprehensive view of the state-of-the-art research activities in advanced Hf-based high-k gate dielectrics grown by chemical-vapor-deposition-based method, including metal-organic-chemical-vapor-deposition (MOCVD), atomic-layer-chemical-vapor-deposition (ALCVD), and plasma-enhanced- chemical-vapor-deposition (PECVD), in CMOS device. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. After that, most attention has been paid to the detailed discussion of the latest development of novel Hf-based high-k gate dielectrics grown by CVD. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This article explores the possible influences of research breakthro...

Nanohybridization of Low-Dimensional Nanomaterials: Synthesis, Classification, and Application

Abstract: Nanomaterials have attracted much attention from academic to industrial research. General methodologies are needed to impose architectural order in low-dimensional nanomaterials composed of nanoobjects of various shapes and sizes, such as spherical particles, rods, wires, combs, horns, and other non specified geometrical architectures. These nanomaterials are the building blocks for nanohybrid materials, whose applications have improved and will continuously enhance the quality of the daily life of mankind. In this article, we present a comprehensive review on the synthesis, dimension, properties, and present and potential future applications of nanomaterials and nanohybrids. Due to the large number of review articles on specific dimension, morphology, or application of nanomaterials, we will focus on different forms of nanomaterials, such as, linear, particulate, and miscellaneous forms. We believe that almost all the nanomaterials and nanohybrids will come under these three categories. Every form or dim...

Tin Dioxide Nanowires: Evolution and Perspective of the Doped and Nondoped Systems

Abstract: SnO2 semiconductor nanowire is an extremely important technological material for use in nanophotonic and nanoelectronic devices. These semiconductor nanowires of desirable property can be achieved through a bottom-up approach to the controlled synthesis in a pure or doped state. Each of the synthetic methods offers materials with broad range structural, morphological, optical, and electrical properties. Selective doping of the SnO2 nanowires by normal, transition or inner transition elements offer a broad variation in the optical and electrical properties and are open for further theoretical exploration of the properties as well as necessary changes possible for the improvement of the material properties. The properties of SnO2 nanowires can be tuned either in the pure state by structural modification or doping during nanowire growth or after growth to meet most of the requirements.