Showing papers in "Journal of Crystal Growth in 1972"

TL;DR: In this article, the potential energy and thermodynamic properties of assemblies of relatively small numbers of atoms (4 < N < 70) interacting through two-body central potentials are investigated.

TL;DR: In this article, phase relationships in the PbO-B 2 O 3 -garnet systems and their relationship to high quality -low defect epitaxial films are discussed and the effects of growth temperature, lattice mismatch and growth rate on the magnetic properties of multiple-doped rare earth iron garnets are shown.

TL;DR: In this article, the authors compared the properties of single crystals of MoS 2, MoSe 2, WSe 2, TaSe 2 and MoTe 2 by direct vapour transport.

TL;DR: In this paper, a model for simulation of a crystal-fluid interface of unlimited thickness is described, where the growth rate of a perfect close-packed surface at low temperature shows an exponential dependence on supersaturation indicating a heterogeneous nucleation barrier.

TL;DR: The role of diffusion and convection in conventional flux growth is compared with the strong effect of the accelerated crucible rotation technique (ACRT) as mentioned in this paper, which allows fast solution flux rates at the growing crystal faces.

TL;DR: In this article, the thin oxide films of TiO2, ZrO2 and HfO2 have been deposited on single crystals of (111) silicon, by chemical vapor deposition (CVD) of the respective organometallic compounds.

TL;DR: In this article, a model for impurity incorporation is proposed which suggests that three factors which determine impurity inclusion are the AsCl3 mole fraction, substrate orientation and substrate temperature, and the major residual impurities giving shallow donor levels are Si, from HCl reations with quartz, and Group VI elements, and that Si incorporation on these surfaces is a function of the HCl pressure in the system.

TL;DR: In this paper, a growth atmosphere composition control method was developed for the growth of gadolinium and other rare earth gallium garnet substrate materials free from dislocations and inclusions.

TL;DR: In this paper, the kinetics of fluid flow and of material and heat transport are discussed, while processes occurring in stationary and uniformly rotating containers are included, the emphasis is on forced convection phenomena due to accelerated or decelerated rotation.

TL;DR: Fluxes of composition 2PbO·V 2 O 5 and 4Bi 2 O 3 ·V 2O 5 have been found to be particularly suitable for crystal growth.

TL;DR: In this paper, a semianalytical procedure is developed to calculate stationary nucleation rates and induction times from the experimental results, which is very useful in situations in which the time-dependence of the mean number of the nuclei formed at constant supersaturation is not available experimentally.

TL;DR: In this article, the epitaxial growth process for the preparation of thin epi-layers of magnetic garnet on a non-magnetic garnet substrate is described, and growth rates are related to growth and liquids temperatures, time, and rotation rate.

TL;DR: In this paper, large single crystals of ZnO (up to 20 g weight) have been grown by oxidation of zn-vapour, which contained foreign impurities in a concentration of about 1-3 ppm.

TL;DR: In this paper, an epitaxial growth of ScN has been investigated in the temperature range 750-1150 °C, using the reaction of ammonia with the volatile scandium halides produced by the reaction HCl, HBr or HI with Sc metal.

TL;DR: In this paper, a series of P-T curves defining the stability region for cubic boron nitride (cubic BN) under different conditions were compared with previous results.

TL;DR: In this paper, it was shown that secondary nucleation does not involve a singular mechanism but that different kinds of secondary nucleations can take place under different conditions of supersaturation, liquid velocity, and impurity concentration.

TL;DR: In this article, the halide-free growth process is compatible with existing CVD systems for the formation of elemental semiconductors and is shown to be a suitable dopant source for the III-V compounds.

TL;DR: In this article, a new bulk crystallization process is described in which the supersaturation in the crystalliser is maintained by feeding very small subcritical crystals, which grows at the expense of the dissolving sub-critical crystals.

TL;DR: In this paper, it was found that the optimum growth rate for these materials is about 6mm/hr with a rotation rate of 45 RPM, and the distribution coefficient for the solid solutions is close to one, so that only small lattice parameter variations were observed in the crystal.

TL;DR: The epitaxial growth of GaN by vapor phase reaction between GaCl and NH 3 in a He carrier gas was described in this paper, where single crystal layers 100-200 ωm thick and ∼ 1 cm 2 in area were obtained on (0001) oriented sapphire substrates at deposition temperatures near 1050 °C.

TL;DR: In this paper, the defects in tin di-sulphide are studied in more detail and compared with previous results obtained using the transmission electron microscope using X-ray topography.

TL;DR: In this article, the linear growth rates of individual basal and prism faces of ice grown on a substrate were made as functions of temperature, excess vapor pressure, and partial pressure of air.

TL;DR: In this paper, the authors show that two distinct modes of growth can occur, in one of which the extraction of latent heat is by radiation into the growing crystal, and in the second mode is that heat extraction is largely by conduction into and through the liquid film.

TL;DR: In this paper, a method of preparing InSb1-xBix single crystals by the Czochralski method is described, where the melt is made in a graphite crucible heated in an electric resistance furnace and flushed with hydrogenized argon.

TL;DR: In this article, a simple method for automatic control of crystal diameter during growth by the Czochralski technique is described in which the crystal diameter is sensed and controlled by continuously weighing the crystal as it grows.

TL;DR: In this article, a study of the segregation of group IV elements based on measurements of free electron concentrations in doped crystals indicates that the mean effective distribution coefficients for Ge and Sn are 2.4 × 10 −2 and 2.1 × 0 −2 respectively.

TL;DR: In this article, a multiple layer liquid phase epitaxial technique is described, where thin solutions are used to achieve epitaxials in the thickness range of one micrometer which are uniform over relatively large areas.

TL;DR: In this article, a time-of-flight mass spectrometer has been coupled to a CVD reactor to elucidate the chemistry of CVD processes occuring in the synthesis of several III-V compounds.

TL;DR: In this paper, liquid phase epitaxy (LPE) by dipping substrates into supercooled fluxed solution provides a convenient way of changing the melt and film composition by substitutions such as gadolinium, samarium or lanthanum for yttrium.

TL;DR: Theoretical and experimental evidence is presented to demonstrate that the maximum stable growth rate of crystals growing from slowly cooled solutions must decrease as the crystal size increases and the solute concentration decreases.