Journal ArticleDOI
Influence of AsH3, PH 3,and B 2 H 6 on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH4 ‐ H 2 Mixture
F. C. Eversteyn,B. H. Put +1 more
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TLDR
In this paper, the authors found that the minimum values of resistivity of doped polycrystalline silicon can be explained in terms of solid solubility and carrier mobility at deposition temperatures below 700 °C with and without addition of dopants.Abstract:
The deposition rate of polycrystalline silicon from a mixture is significantly influenced by the addition of , ,and . At a deposition temperature of 680 °C causes a decrease by a factor of 7, causes a decrease by a factor of 2.5, while a two times higher deposition rate is obtained with addition. Out of these three dopant hydrides and do not affect the activation energy of the deposition reaction compared to undoped growth (37 kcal/mole). The Arrhenius plot for the deposition of silicon from a mixture shows two activation energies: 20 kcal/mole at and 7 kcal/mole below 620°C. The experimentally found minimum values of the resistivity of doped polycrystalline silicon can be explained in terms of solid solubility and carrier mobility. At deposition temperatures below 700 °C with and without addition of dopants the polycrystalline silicon surface is mirror‐like. Significant differences have, however, been observed by electron microscopy. Compared to undoped growth boron was found to lower the etch rate of the polycrystalline silicon film markedly.read more
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces.
Robert J. Hamers,Yajun Wang +1 more
Journal ArticleDOI
Structural and electrical properties of trimethylboron-doped silicon nanowires
Kok Keong Lew,Ling Pan,Timothy E. Bogart,Sarah M. Dilts,Elizabeth C. Dickey,Joan M. Redwing,Yanfeng Wang,Marco A. Cabassi,Theresa S. Mayer,Steven W. Novak +9 more
TL;DR: Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs).
Journal ArticleDOI
Doping reaction of PH3 and B2H6 with Si(100)
TL;DR: In this article, the reaction of phosphine PH3 and diborane B2H6 on Si(100) surfaces was studied by surface analytical techniques in relation to the in situ doping process in the chemical vapor deposition of silicon.
Journal ArticleDOI
Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions
TL;DR: In this article, a complete set of processes sufficient for manufacture of n−metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors.
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