Showing papers in "Microelectronic Engineering in 1986"

TL;DR: In this paper, a fine scanning tip is heated to a steady state temperature at a location remote from the structure to be investigated, and then the tip is moved to a position proximate to, but spaced from, the structure.

TL;DR: In this article, a simple approach to simulating the electron-beam lithography for sub-0.2 μm T-gate fabrication is presented, where both the proximity parameters and the solubility rates of resists are experimentally determined.

TL;DR: In this paper, the growth of ruthenium and osmium layers formed by electron induced dissociation of carbonyl Ru 3 (CO) and Osmium carbonyls Os 3 (O 3 ) was demonstrated.

TL;DR: In this paper, selective epitaxial growth using the SiH 2 Cl 2 / HCl / H 2 system under reduced pressure was accomplished in windows surrounded by a fine patterned insulator film on a silicon substrate.

TL;DR: In this paper, the authors investigated the characteristics of maskless ion beam assisted deposition for W and Ta films and measured the deposited film composition by Auger electron spectroscopy, which indicated that the decomposition is induced in WF6 or Ta(OC2H5)5 adsorbed on the target surface by the ion bombardment and unvolatile w and Ta are deposited.

TL;DR: In this paper, the application of focused ion beam (FIB) technology to the sub-half-micron region was discussed, and the fabrication of a GaAs FET by the use of a bilayer structure was discussed.

TL;DR: In this paper, a new method is proposed, which is easier to use and at least as accurate as the existing methods, applying a test pattern which is based on the radial symmetry of the proximity function.

TL;DR: In this paper, the needs of semiconductor engineers are reviewed and compared with the performance of currently available electron beam test systems as well as with the predicted limitations of the technology, and some recent work is described which has demonstrated superior performance in several ways when compared to current available equipment.

TL;DR: In this article, the electrical properies of wires made in this way have been investigated and other applications of these techniques are discussed, including electron beam lithography and dry etching.

TL;DR: In this article, a mechanistic study of microwave plasma etching of polyimides in oxygen plus CF 4 gas mixtures was carried out with several mutually complementary surface-sensitive characterization techniques.

TL;DR: In this paper, a novolak-based system has been developed, which fulfills all the requirements for a submicron-single-layer resist technology, and the dissolution inhibitor is destroyed via a catalytic agent generated by the radiation.

TL;DR: In this article, the authors compared the performances of two interlevel dielectric planarization methods: the conventional etch-back planarisation and a new process using Spin-On-Glass (SOG).

TL;DR: The COMPOSITE (Complete MODEeling Program of Siamese Language) as discussed by the authors is a two dimensional process simulator which containts a module for ion beam etching using the well-known string algorithm.

TL;DR: In this paper, a combination of microwave plasma excitation and RF biasing of an electrode on which etching substrates were placed, was used to independently control plasma density and the kinetic energy with which ions from the plasma strike the substrate.

TL;DR: In this article, it was shown that the contaminating films on the trench walls are formed by unsaturated B x Cl y species from the BCl 3 plasma, and that the so called black silicon occurring in a pure Cl 2 plasma is caused by micro masking by Al-, Si- oxide clusters which stem from surface adsorbed oxygen and the alumina covered cathode.

TL;DR: In this paper, a hybrid test system connecting a CAD design system equipment for VLSI and an e-beam tester has been established in order to obtain exact and automated probing of these nodes by the electron beam.

TL;DR: In this paper, a novel approach to contactless measurement of voltages on internal nodes of integrated circuits is presented, based on time-resolved photoemission exploiting the single-photon process with short laser pulses in the ultra-violet.

TL;DR: In this paper, a multi-layer technique for e-beam written X-ray master masks with electroplated gold absorbers is described, which allows to fulfill the demands on controlling linewidth of 0.5 μm better than ± 50 nm.

TL;DR: In this article, the pattern placement accuracy of the master masks is primarily determined by the e-beam writing process and yields appr. 0.1 μm (3σ), even in a non-optimal mask geometry.

TL;DR: The use of electron beams for contactless testing of electrical functions and electrical integrity of different active devices in VLSI - chips - has been demonstrated over the past years.

TL;DR: In this article, the theoretical limits of e-beam testing are discussed, assuming realistic conditions for the performance of the electron optics, a system with 40 ps time resolution and 0.5 μm spatial resolution should theoretically allow a voltage resolution of 0.4 mV.

TL;DR: The gold-silicon-beryllium liquid-metal field-ion emitter is a particularly versatile source for focused ion beam microlithography systems, since it can provide both p-type and n-type dopants for gallium arsenide as mentioned in this paper.

TL;DR: In this article, the priciple of confocal microscopy is described and its special possibilities for VLSI circuit structure measurements are discussed, and a complete system for such measurement is presented which combines confocal microscope with standard optical methods.

TL;DR: In this article, a review of the factors that influence damage in dry etching is presented, including ion energy, etching species, and etching chamber configuration, which can be minimized by using the optimal etching condition and chamber design.

TL;DR: In this paper, the authors describe new types of organosilicon photoresists, which are sensitive throughout the ultraviolet region from 2000 to 45 A. The synthesis is based upon a simple condensation reaction of 3-aminopropyl-substituted polysiloxanes with photosensitive naphthoquinone diazosulfonyl chlorides.

TL;DR: In this article, a small window was made in the passivation film by focused ion beam etching (FIB etching) and EB testing was performed through this window, and the threshold voltage shift caused by FIB was permitted until the residual film thickness on the gate electrode became 0.5μm.

TL;DR: In this article, a projection system based upon a KrF excimer laser and the Wynne-Dyson 1:1 optics is described. Butler et al. discuss the basic properties of excimer lasers and the overall design concepts of optical systems.

TL;DR: In this paper, a method to determine the average membrane stress by the measurement of membrane resonant frequencies and its application at stress adjustment examinations of silicon membranes is presented. But the method is limited to the case of silicon.