Journal ArticleDOI
0.18μm CMOS Low Voltage Power Amplifier For WSN Application
TLDR
This paper presents the design of a Class A/B power amplifier (PA) for 2.4-2.4835GHz Wireless Sensor Network (WSN) system in 0.18μm CMOS technology that achieves power added efficiency (PAE) of 26.73% while delivering an output power of 6.35dBm at 1dB compression point.Abstract:
This paper presents the design of a Class A/B power amplifier (PA) for 2.4-2.4835GHz Wireless Sensor Network (WSN) system in 0.18μm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. Seven different level of output power can be obtained through a three- bit control code. The tested results shows that the proposed PA achieves power added efficiency (PAE) of 26.73% while delivering an output power of 6.35dBm at 1dB compression point. Its power gain is 15.87dB. With a low DC voltage supply of 1V, its power consumption is 15.3mW. The PA die size is 1070×610μm 2 . DOI: http://dx.doi.org/10.11591/telkomnika.v11i8.3050read more
Citations
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Journal ArticleDOI
Design of Wide-band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion
TL;DR: The design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier.
Journal ArticleDOI
Wideband power amplifier based on Wilkinson power divider for s-band satellite communications
TL;DR: The design and simulation of wideband power amplifier based on multi-section Wilkinson power divider based on Class-A topology and ATF-511P8 transistor have been used and is stable over the entire bandwidth.
Journal ArticleDOI
Optimal Design of Low Power CMOS Power Amplifier Using Particle Swarm Optimization Technique
S. Manjula,D. Selvathi +1 more
TL;DR: A low voltage 2.4 GHz CMOS power amplifier for wireless personal area network (WPAN) applications is presented in TSMC 0.13 and the design parameters are needed to be optimized using particle swarm optimization technique.
Journal ArticleDOI
Study on Lightning Intruding Overvoltage in Yantan Extension Substation
TL;DR: In this article, the authors investigated the overvoltage in 500kV substation extension project in Yantan, China, and found that strong insulating of incoming line towers, importance of lightning shielding failure intruding waves and influence of power frequency voltage on lightning intruding overvoltages.
Journal ArticleDOI
High linear low voltage CMOS power amplifier for 2.4 GHz applications
TL;DR: In this article , a low voltage power amplifier is proposed using 0.13 µm TSMC CMOS process and RF distortion technique is applied to improve linearity, the proposed power amplifier produces 18 dB gain, 21.6% PAE and 21.7 dBm of OIP3 at 0.8 V supply voltage.
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