Proceedings ArticleDOI
56 Gbit/s InGaAlAs-MQW 1300 nm Electroabsorption-Modulated DFB-Lasers with Impedance Matching Circuit
Holger Klein,C. Bornholdt,Georges Przyrembel,A. Sigmund,W.-D. Molzow,H.-G. Bach,Martin Moehrle +6 more
- pp 696-698
TLDR
In this article, an electroabsorption modulated DFB Lasers at 1305 nm using an identical InGaAlAs MQW core in the DFB and the EAM section were developed.Abstract:
We have developed electroabsorption modulated DFB Lasers at 1305 nm using an identical InGaAlAs MQW core in the DFB and the EAM section. A 50Ω matching circuit is realized on-chip giving an f3dB of 39.4 GHz. We present 56 Gbit/s eyes with a dynamic extinction ratio of 9.5 dB. The fiber coupled output power under modulation is +5 dBm at 45°C.read more
Citations
More filters
Proceedings ArticleDOI
1.3 μm Electroabsorption Modulated lasers for PAM4/PAM8 single channel 100 Gb/s
Ute Troppenz,Michael Narodovitch,Christoph Kottke,G. Przyrembel,Wolf-Dietrich Molzow,A. Sigmund,Heinz-Gunter Bach,Martin Moehrle +7 more
TL;DR: In this paper, 1.3μm Electroabsorption modulated DFB Lasers (EMLs) operating at 45°C are presented for higher order intensity modulation formats.
Proceedings ArticleDOI
InGaAlAs RW-based electro-absorption-modulated DFB-lasers for high-speed applications
Martin Moehrle,Holger Klein,Carsten Bornholdt,G. Przyrembel,A. Sigmund,Wolf-Dietrich Molzow,Ute Troppenz,Heinz-Gunter Bach +7 more
TL;DR: In this article, a single InGaAlAs MQW waveguide is used for both the DFB and the EAM enabling a low-cost fabrication process similar to a conventional DFB laser diode.
Proceedings ArticleDOI
$1.3\mu\text{m}$ SI-BH Electro-Absorption Modulated Laser Operating at 56Gbauds/s with 8.4dB Dynamic Extinction Ratio
Giancarlo Cerulo,Helene Debregeas,F. Lelarge,Alexandre Garreau,F. Pommereau,J.-G. Provost,D. Lanteti,Karim Mekhazni,Catherine Fortin,Xing Dai,Siddharth Joshi,David Carrara,Filipe Jorge,Fabrice Blache,Franck Mallecot,Mohand Achouche,R. Rios Muller,Christian Simonneau,Gabriel Charlet,J.L. Gentner +19 more
TL;DR: A 56Gbaud/s electro-absorption modulated laser, based on semi-insulated buried waveguide technology, and 112Gb/s PAM4 transmission, with a dynamic extinction ratio of 8.4dB are demonstrated.
Journal ArticleDOI
Gain-Coupled 4×56 Gb/s EML Array with Optimized Bonding-Wire Inductance
Shuhan Yang,Changzheng Sun,Bing Xiong,Jian Wang,Hao Zhi-Biao,Yanjun Han,Lai Wang,Hongtao Li,Jiadong Yu,Yi Luo,Yoshiaki Nakano +10 more
TL;DR: In this paper, the influence of bonding-wire inductance on the modulation performance of EML arrays is investigated based on the circuit parameters extracted from the S11 data, and it is found that the modulation bandwidth can be enhanced by taking advantage of the bondingwire induced resonance.
Book ChapterDOI
Semiconductor-based modulators
Hiroshi Yasaka,Yasuo Shibata +1 more
TL;DR: In this paper, a comparison of direct laser modulation, electroabsorption, and Mach-Zehnder interferometer modulators is presented, with specific emphasis on aspects of high-speed modulator design.