Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TLDR
In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.Abstract:
Single‐crystal , , and films have been grown on and a number of insulating substrates by the decomposition of alkyl‐gallium compounds in the presence of arsine, phosphine, arsine‐phosphine, and arsine‐stibine mixtures. Both triethylgallium and trimethylgallium have been used successfully in the preparation of . This process makes compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors and eliminates many of the difficulties inherent in multitemperature‐zone processes.read more
Citations
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Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Journal ArticleDOI
History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes
R.D. Dupuis,Michael R. Krames +1 more
TL;DR: The development of high-performance visible-spectrum light-emitting diodes (LEDs) has occurred over a period of over 60 years, beginning with the discovery of the first semiconductor p-n junction in 1940, the development of solid-state electronic band theory in the 1940s, the invention of bipolar transistor in 1947, and the demonstration of efficient light generation from III-V alloys in the 1950s and 1960s.
Book
Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization
TL;DR: In this paper, the authors present a detailed analysis of the properties of Heteroepitaxial layers in terms of their properties and properties, such as surface and chemical properties of Semiconductors.
Journal ArticleDOI
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
Sarah L. Keller,Yifeng Wu,Giacinta Parish,Naiqian Ziang,J.J. Xu,Bernd Keller,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this paper, the development of GaN-based devices for microwave power electronics at the University of California, Santa Barbara (UCSB) is reviewed, and the power performance of AlGaN/GaN-on-sapphire heterojunction field effect transistors improved from 1.1 W/mm to 6.6 W /mm, respectively.
Related Papers (5)
The Use of Metal‐Organics in the Preparation of Semiconductor Materials II . II – VI Compounds
H. M. Manasevit,W. I. Simpson +1 more