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Journal ArticleDOI

A silicon condenser microphone using bond and etch-back technology

J. Bergqvist, +1 more
- 01 Nov 1994 - 
- Vol. 45, Iss: 2, pp 115-124
TLDR
In this article, a new technology for the fabrication of condenser microphones in silicon has been developed, which allows for a highly simplified process, based on Bond and etch-back techniques and surface micromachining of monocrystalline silicon.
Abstract
A new technology for the fabrication of condenser microphones in silicon has been developed. Bond and etch-back techniques and surface micromachining of monocrystalline silicon allow for a highly simplified process. The fabrication process has been applie

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Citations
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Patent

Mems package and method for the production thereof

TL;DR: A micro electro-mechanical systems (MEMS) package is described in this paper, which includes a carrier substrate having a top side, a MEMS chip mounted on the top side of the carrier substrate, and at least one chip component on or above the top surface of the substrate or embedded in the substrate.
Journal ArticleDOI

Piezoelectric cantilever microphone and microspeaker

TL;DR: A micromachined piezoelectric cantilever transducer, which works both as a microphone and as a microspeaker, has been fabricated and tested as mentioned in this paper.
Journal ArticleDOI

Capacitive microphone with low-stress polysilicon membrane and high-stress polysilicon backplate

TL;DR: In this paper, a capacitive single-chip silicon microphone with very low-stress polysilicon membrane was fabricated and a mechanism for stress-releasing due to the high stress of the perforated membrane was introduced.
Patent

Encapsulated electronic component and production method

TL;DR: In this paper, the authors proposed an encapsulated component that includes a carrier substrate and at least one chip positioned on the top of the carrier substrate, and electrically connected to it by means of electrically conductive connections.
Journal ArticleDOI

High-performance condenser microphone with fully integrated CMOS amplifier and DC-DC voltage converter

Abstract: The development of a capacitive microphone with an integrated detection circuit is described. The condenser microphone is made by micromachining of polyimide on silicon. Therefore, the structure can be realized by postprocessing on substrates containing integrated circuits (IC's), independently of the IC process, integrated microphones with excellent performances have been realized on a CMOS substrate containing dc-dc voltage converters and preamplifiers. The measured sensitivity of the integrated condenser microphone was 10 mV/Pa, and the equivalent noise level (ENL) was 27 dB(A) re. 20 /spl mu/Pa for a power supply voltage of 1.9 V, which was measured with no bias voltage applied to the microphone. Furthermore, a back chamber of infinite volume was used in all reported measurements and simulations.
References
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Journal ArticleDOI

Bonding of silicon wafers for silicon‐on‐insulator

TL;DR: In this paper, the surface energy of a silicon-on-insulator was evaluated based on crack propagation theory, and it was found that the bond strength increased with the bonding temperature from about 60-85 erg/cm2 at room temperature to ≂2200 erg/ cm2 at 1400°C.
Journal ArticleDOI

Wafer bonding for silicon‐on‐insulator technologies

TL;DR: In this paper, a silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs, and the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation.
Proceedings ArticleDOI

Squeeze-film damping in solid-state accelerometers

TL;DR: In this paper, a finite-element technique is presented that essentially solves Reynold's equation for small displacements and squeeze numbers by analogy with heat conduction in a solid with internal heat generation.
Journal ArticleDOI

A subminiature condenser microphone with silicon nitride membrane and silicon back plate

TL;DR: In this article, the fabrication process and properties of a capacitive silicon sensor for the detection of airborne sound are described, which consists of two chips; one chip carries a 150nm-thick silicon nitride membrane of 0.8×0.8 mm2, and the second chip represents a complete back plate including the back electrode and the air gap spacer.
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