Journal ArticleDOI
Accelerated aging test of Ga1−xAlxAs DH lasers
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TLDR
In this paper, an accelerated aging test is performed at temperatures of 70, 110, and 140°C to estimate the activation energy, which is defined to be a time at which the threshold current measured at a standard temperature 25 °C reaches 15 times the initial value.Abstract:
An accelerated aging test is performed at temperatures of 70, 110, and 140 °C to estimate the activation energy Samples are operated in the LED mode at high temperatures of 110 and 140 °C At 70 °C samples are operated in lasing mode of optical output 027 mW/μm The laser lifetime is defined to be a time at which the cw threshold current measured at a standard temperature 25 °C reaches 15 times the initial value The activation energy 074 eV is obtained It is shown that the degradation does not depend on the optical output power below the power level of 03 mW/μm and that the activation energy is indifferent to the operation mode, LED mode, or lasing mode, at a low power level The use of the LED mode operation and the definition of the laser lifetime in terms of the characteristics at low standard temperature enable one to perform the accelerated aging test at high temperatures above 110 °C where cw operation is almost impossible The reliability is examined at 70 °C using 50 samples and an average laser lifetime is obtained The application of the activation energy gives the average laser lifetime at the junction temperature of 30 °C to be 3×105 hread more
Citations
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Journal ArticleDOI
High-temperature performance of GaAs-based bound-to-continuum quantum-cascade lasers
Christian Pflügl,W. Schrenk,S. Anders,Gottfried Strasser,C. Becker,Carlo Sirtori,Y. Bonetti,Antoine Muller +7 more
TL;DR: In this article, a GaAs-based quantum-cascade laser based on a bound-to-continuum transition has been realized and characterized, which combines the advantages of the well known three-well and superlattice active regions.
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Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical model
TL;DR: In this paper, the thermal impedances of double heterostructure, oxide isolated, stripe geometry diode lasers were measured and compared to a calculated value from a theoretical heatflow analysis.
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The reliability of (AlGa)As CW laser diodes
M. Ettenberg,H. Kressel +1 more
TL;DR: In this paper, the major factors bearing on the reliability of (AlGaAs CW laser diodes are discussed in terms of their present knowledge of their effects on device performance, their origin, and their reduction or elimination.
Journal ArticleDOI
Methodology of accelerated aging
TL;DR: Eight alternative black-box (i.e., input-output) methodologies that are appropriate for estimating, from external characteristics, the reliability of semiconductor lasers or other gradually degrading manufactured products with lifetimes too long to measure directly over practical time spans are given.
Journal ArticleDOI
Current directions in GaAs laser device development
TL;DR: In this paper, the authors describe several of the most important directions of current applied research and development on injection laser sources with emphasis on reliability, optical linearity, and temporal stability.
References
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Journal ArticleDOI
Reliability of DH GaAs lasers at elevated temperatures
R. L. Hartman,R. W. Dixon +1 more
TL;DR: In this paper, data from accelerated aging tests on continuously operating stripe-geometry double-heterostructure GaAs was presented and it was concluded that continuous room-temperature operation of these devices as GaAs with power outputs exceeding 1 mW per laser face for times in excess of 100000 h is possible.
Journal ArticleDOI
Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double‐heterostructure lasers
TL;DR: In this paper, the statistical distribution of lifetimes of double-heterostructure laser devices was discussed and the authors showed that 17% of the devices die prematurely as infant mortalities while 83% die by a mechanism well characterized by a lognormal distribution.
Journal ArticleDOI
Influence of device fabrication parameters on gradual degradation of /AlGa/As cw laser diodes
I. Ladany,H. Kressel +1 more
TL;DR: Several factors not previously associated with cw laser degradation are shown to influence the life and reliability of (AlGaAs)As cw injection laser diodes, such as zinc diffusion, sawing damage, and facet erosion as mentioned in this paper.
Journal ArticleDOI
Accelerated aging and a uniform mode of degradation in (Al,Ga)As double-heterostructure lasers
R. W. Dixon,R. L. Hartman +1 more
TL;DR: In this article, the degradation and accelerated aging characteristics of currently fabricated (Al,Ga)As lasers are described, and it is shown that the dominant degradation process in present devices is not lasing related in devices operated at power levels ≥ 5 mW/face.
Journal ArticleDOI
Long‐term degradation of GaAs‐Ga1−xAlxAs DH lasers due to facet erosion
TL;DR: In this paper, the degradation rate strongly depends on the output power density and facet erosion plays an important role in the long-term degradation of GaAs•Ga1−xAlxAs double heterostructure lasers.