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Proceedings ArticleDOI

Aerial-image-based inspection on subresolution scattering bars

TLDR
In this article, the authors present the results of a study to define a production-worthy inspection technique for subresolution solid and hollow scattering features used in 193-nm lithography.
Abstract
The paper presents the results of a study to define a production-worthy inspection technique for subresolution solid and hollow scattering features used in 193-nm lithography. Masks are inspected using conventional high-NA and aerial-imaging-based mask inspection tools. Inspection results are compared regarding capture rate and nuisance defect rate.

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Citations
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Proceedings ArticleDOI

Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers

TL;DR: In this article, an aerial image-based mask inspection is investigated and presented, where the focus of the inspection is shifted from detecting every single minor change on mask to detecting what on mask could possibly impact the printing image quality on the wafer.
Proceedings ArticleDOI

Real-time aerial images based mask inspection, Die-to-Wafer Image inspection

TL;DR: In this paper, the measured mask pattern images obtained from mask inspection system are transformed into wafer-like images by simulation-based software, which is used to simplify the difficult task of defining defect size.
Journal ArticleDOI

A New Algorithm for Die-to-Wafer-like Image Mask Inspection in Real Time

TL;DR: This technique of generating WI from a measured mask pattern is well suited for attenuated phase shift masks (PSMs) and Cr binary masks and is demonstrated numerically the possibility of a new algorithm for D-to-WI inspection in real time.
Proceedings ArticleDOI

CD uniformity control using aerial image-based mask inspection

TL;DR: In this paper, the authors investigated CD uniformity control using aerial image-based mask inspection, where a defect is detected based on its impact onto the aerial image projected by the given mask.
Proceedings ArticleDOI

Mask Inspection Technology for 65nm (hp) Technology Node and Beyond

TL;DR: In this article, a high-resolution mask inspection platform is developed to enable the high-quality mask defect inspection for 65-45nm node, which operates at wavelength of 198.5nm, which is nearly equal to that of the 193-nm laser exposure system.
References
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Proceedings ArticleDOI

OPC methods to improve image slope and process window

TL;DR: This paper uses the gradient of the image slope andgradient of the edge placement error (EPE) in order to improve both slope and EPE during OPC to maximize slope for improved image robustness and to maximize process window.
Proceedings ArticleDOI

Model-based OPC for sub-resolution assist feature enhanced layouts

TL;DR: Sub-resolution assist features (SRAF) have been demonstrated to provide significant process window improvement when used in combination with off-axis illumination (OAI) and attenuated phase shifted mask enhanced lithography, while some through pitch linewidth variations can be reduced through the use of SRAF.
Proceedings ArticleDOI

Aerial-image-based inspection of binary (OPC) and embedded-attenuated PSM

TL;DR: In this article, the authors present a method to detect and classify defects based on their impact at the wafer CD result, instead of size-dependent defect specification, defects are found according to their impact on the CD result.
Proceedings ArticleDOI

Effects of mask error factor on process window capability

TL;DR: In this paper, the Mask Error Factor (MEF) was evaluated using a 4X i-line stepper for a range of feature sizes from subwavelength to approximately twice the exposure wavelength.
Proceedings ArticleDOI

Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers

TL;DR: In this article, an aerial image-based mask inspection is investigated and presented, where the focus of the inspection is shifted from detecting every single minor change on mask to detecting what on mask could possibly impact the printing image quality on the wafer.
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