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Proceedings ArticleDOI

Assessment of vacuum lifetime in nL-packages

W. Reinert, +2 more
- Vol. 1, pp 225-230
TLDR
In this article, a new ultra-fine leak test based on Q-factor monitoring was developed that has the potential to be used for in-line critical leak rate testing on wafer level before device singulation.
Abstract
Vacuum wafer bonding technology provides a number of very effective techniques to produce low-cost, hermetic sealed packages for micromachined sensors and actuators. Beside the protection of the device from outside environmental stresses, the package must also provide a cavity ambient compatible with the device performance and reliability. The paper reviews the shortcomings of existing fine leak tests to assess the stability of the cavity atmosphere over long time. A new ultra-fine leak test based on Q-factor monitoring was developed that has the potential to be used for in-line critical leak rate testing on wafer level before device singulation. With the example of a poly-silicon resonating microsensor, it is shown that the test is sensitive enough to predict the cavity pressure for a demanded device lifetime of 15 years. The role of an integrated thin film getter in stabilizing the cavity vacuum and extending device lifetime is discussed

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Citations
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Journal ArticleDOI

Getter free vacuum packaging for MEMS

TL;DR: In this paper, the authors analyzed the factors that influence the vacuum level and derived a relationship between the balanced vacuum level, the effective leak rate, and the vacuum maintaining lifetime, and proposed a novel vacuum package design with vacuum buffer cavity.
Proceedings ArticleDOI

Resonant 1D MEMS mirror with a total optical scan angle of 180° for automotive LiDAR

TL;DR: The first resonant 1D MEMS mirror with a field of view of up to 180° was presented in this paper. But it is not yet available for use with a 2 mm x 4 mm ellipsoid mirror and oscillates at a scan frequency of about 1.5 kHz.
Proceedings ArticleDOI

A Novel And Efficient Packaging Technology For RF-MEMS Devices

TL;DR: NXP Semiconductors has developed an efficient packaging technology for RF-MEMS devices in close cooperation with the Fraunhofer Institute in Itzehoe (ISiT) as mentioned in this paper.
Patent

Method for testing the leakage rate of vacuum capsulated devices

TL;DR: In this paper, a method for testing the leakage rate of an encapsulated device, comprising the step: bombing the device with a Neon and/or Argon atmosphere using a bombing pressure of at least more than environmental pressure and measuring the quality factor before and after bombing.
Journal ArticleDOI

Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging

TL;DR: In this article, the authors investigated the potential of an Au/Ti bilayer with a thin or ultrathin non oxidizable Au layer as a low activation temperature getter material for vacuum control in wafer-level packages of micro electro mechanical systems.
References
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Journal ArticleDOI

New method for testing hermeticity of silicon sensor structures

TL;DR: In this paper, a method for testing the hermeticity of different wafer-bonding processes used in silicon sensor devices is proposed based on measuring the gas concentration in a sealed silicon cavity by Fourier-transform infrared spectroscopy (FTIR).
Proceedings ArticleDOI

Chemical treatment of getter films on wafers prior to vacuum packaging

TL;DR: In this article, the patterned getter film at wafer level has been proven to be the viable technical solution to integrate a getter-film in vacuum packaged MEMS, and demonstrated the full compatibility of the getter films towards both temperature and chemical treatment with regards to the activation and capacity.

In-line critical leak rate testing of vacuum-sealed and backfilled resonating MEMS devices

TL;DR: In this article, a new ultra-fine leak test is proposed that has the potential to be used for in-line critical leak rate testing on wafer level before wafer dicing.
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A new ultra-fine leak test based on Q-factor monitoring was developed that has the potential to be used for in-line critical leak rate testing on wafer level before device singulation.