Book ChapterDOI
Beta to alpha transition and defects on SiC on Si grown by CVD
Francisco M. Morales,Ch. Förster,Oliver Ambacher,Jörg Pezoldt +3 more
- pp 131-134
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TLDR
In this article, the features of α-SiC (0001) epitaxially grown on top of β -SiC(l11)/Si(111) is reported by means of transmission electron microscopy (TEM).Abstract:
The features of α-SiC (0001) epitaxially grown on top of β-SiC(l11)/Si(111) is reported by means of transmission electron microscopy (TEM). Hexagonal and rhombohedral polytype nuclei, mainly 4H-SiC, appear after the growth of a fixed cubic SiC thickness which is related to the selected growth conditions: Si/C ratio and growth temperature. The defect structure of these multilayer systems (voids, planar defects, facets and polycrystalline top clusters) and the hexagonality of the SiC surface are determined and described.read more
References
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Journal ArticleDOI
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
TL;DR: In this paper, an overview is given of the results and conclusions of recent material research on the MBE growth, characterization and properties of SiC heteropolytypic structures and related materials.
Journal ArticleDOI
On the peculiarities of bright/dark contrast in HRTEM images of SiC polytypes
TL;DR: In this article, the tilt induced changes in HRTEM images obtained near the [1/1/0] zone of cubic centrosymmetric Si and non-centro symmetric SiC were studied by the use of multislice image simulations.
Journal ArticleDOI
Application of nonequilibrium phase transition to heteropolytype structure creation
TL;DR: The epitaxial layer polytype structure can be influenced by placing specific defects into the substrate crystal surface as discussed by the authors, and defect generation on the surface before crystal growth will reduce the critical growth rate of the phase transitions 6 H → 4 H and 6 H→ 3 C by a factor 2 to 4 in comparison with untreated surfaces.
Journal ArticleDOI
Origin of Threefold Periodicity in High-Resolution Transmission Electron Microscopy Images of Thin Film Cubic SiC
TL;DR: By comparing the fast Fourier transform patterns of the experiments and the simulations, as well as by using dark-field imaging, it is shown unambiguously that only the model of overlapping twinned 3C-SiC crystals fully agrees with the experiments.
Journal ArticleDOI
Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
K. Pfennighaus,Andreas Fissel,Ute Kaiser,M. Wendt,J. Kräuβlich,G. Peiter,Bernd Schröter,Wo. Richter +7 more
TL;DR: In this article, thin crystalline SiC films were grown on Si(111) using solid state evaporation at substrate temperatures between 780 and 900 °C. The growth rates were in the range between 30 and 120 nm h−1.
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