Journal ArticleDOI
Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects
Frank B. Kaufman,David B. Thompson,R. E. Broadie,Mark A. Jaso,William Leslie Guthrie,D. J. Pearson,M. B. Small +6 more
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TLDR
In this article, a chemical-mechanical polish process for metal interconnects is described, in terms of competition between an etching reaction which dissolves W and a passivation reaction to reform on the surface of the W. Mechanical action to continually disrupt a surface passivating film on W, and chemical action, to remove W, appear to be requirements for workability of the process.Abstract:
Interconnect features of W metal, recessed in an dielectric, can be formed using a novel chemical‐mechanical polish process. Mechanical action, to continually disrupt a surface passivating film on W, and chemical action, to remove W, appear to be requirements for workability of the process. A trial process chemistry using a ferricyanide etchant is described. Removal of the W is discussed in terms of competition between an etching reaction which dissolves W and a passivation reaction to reform on the surface of the W. This novel processing technology is compared with earlier methods of fabricating metal interconnect structures.read more
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Journal ArticleDOI
Low dielectric constant materials.
TL;DR: Willi Volksen joined the IBM Research Division at the IBM Almaden Research Center in San Jose, CA, where he is an active research staff member in the Advanced Materials Group of the Science and Technology function.
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Carbon-Based Metal-Free Catalysts for Electrocatalysis beyond the ORR
Chuangang Hu,Liming Dai +1 more
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Chemical mechanical planarization for microelectronics applications
TL;DR: An overview of the CMP process in general, the science and mechanism of polishing, different metal and dielectric CMP processes as well as the future trends are discussed in this paper.
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Silicides and ohmic contacts
Jeffrey P. Gambino,E.G. Colgan +1 more
TL;DR: An overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-Si contacts, metal and silicide deposition techniques, metal reactions, silicide patterning processes, and device degradation due to silicides, is given in this article.
Journal ArticleDOI
Chemical mechanical planarization: slurry chemistry, materials, and mechanisms.
TL;DR: This work focuses on the application of CMP to FEOL and MOL systems, which combines low-k and Ultralow-k materials, and the challenges faced by these systems in the aftermath of the Chernobyl disaster.