Journal ArticleDOI
Material removal mechanism in chemical mechanical polishing: theory and modeling
Jianfeng Luo,David Dornfeld +1 more
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TLDR
In this paper, the authors investigated the abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process and developed a novel model for material removal in CMP.Abstract:
The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is MRR=/spl rho//sub w/NVol/sub removed/, where /spl rho//sub w/ is the density of wafer N the number of active abrasives, and Vol/sub removed/ the volume of material removed by a single abrasive. The model proposed integrates process parameters including pressure and velocity and other important input parameters including the wafer hardness, pad hardness, pad roughness, abrasive size, and abrasive geometry into the same formulation to predict the material removal rate (MRR). An interface between the chemical effect and mechanical effect has been constructed through a fitting parameter H/sub w/ a "dynamical" hardness value of the wafer surface, in the model. It reflects the influences of chemicals on the mechanical material removal. The fluid effect in the current model is attributed to the number of active abrasives. It is found that the nonlinear down pressure dependence of material removal rate is related to a probability density function of the abrasive size and the elastic deformation of the pad. Compared with experimental results, the model accurately predicts MRR. With further verification of the model, a better understanding of the fundamental mechanism involved in material removal in the CMP process, particularly different roles played by the consumables and their interactions, can be obtained.read more
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Chemical mechanical planarization for microelectronics applications
TL;DR: An overview of the CMP process in general, the science and mechanism of polishing, different metal and dielectric CMP processes as well as the future trends are discussed in this paper.
Journal ArticleDOI
Mechanical properties of nanoparticles: basics and applications
Dan Guo,Guoxin Xie,Jianbin Luo +2 more
TL;DR: In this paper, the basic physics of the relevant interfacial forces to nanoparticles and the main measuring techniques are briefly introduced first, then, the theories and important results of the mechanical properties between nanoparticles or the nanoparticles acting on a surface, e.g., hardness, elastic modulus, adhesion and friction, as well as movement laws are surveyed.
Journal ArticleDOI
Material Removal Mechanisms in Lapping and Polishing
Christopher J. Evans,E. Paul,David Dornfeld,Don A. Lucca,Gerry Byrne,M. Tricard,Fritz Klocke,Olaf Dambon,Brigid Mullany +8 more
TL;DR: The fundamental mechanisms of material removal in lapping and polishing processes are reviewed and key areas where further work is required are identified.
Journal ArticleDOI
A micro-contact and wear model for chemical-mechanical polishing of silicon wafers
Yongwu Zhao,Liming Chang +1 more
TL;DR: In this article, a microcontact and wear model for chemical-mechanical polishing of silicon wafers is presented, based on elastic-plastic micro-contact mechanics and abrasive wear theory.
Journal ArticleDOI
Magnetic field assisted abrasive based micro-/nano-finishing
TL;DR: In this article, a comprehensive overview of various flowing abrasive-based micro-nano-machining processes is presented and a generalized mechanism of material removal for these processes is proposed.
References
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