Proceedings ArticleDOI
Critical angle of channeling for low energy ion implantation
Jeong-Youb Lee,Jung-Ho Lee,Kil-Ho Lee,Sahng-Kyoo Lee,G.N. Cai,Y. Erokhin +5 more
- Vol. 2, pp 720-723
TLDR
In this paper, the authors investigated the dependence of channeling suppression on wafer tilt angles for sub-5 keV B/sup +/ and sub-15 keV BF/sub 2/ implantations using a ultra-low energy ion implanter.Abstract:
We investigated the dependence of channeling suppression on wafer tilt angles for sub-5 keV B/sup +/ and sub-15 keV BF/sub 2/ implantations using a ultra-low energy ion implanter. A noticeable reduction of channeling tail for 1 keV B/sup +/ and 4.5 keV BF/sub 2/ implants was demonstrated to require tilt angles greater than 8/spl deg/. These results are compared with recently published Monte-Carlo simulation data which indicate that ion redistribution at tail region is dominated by channeling along direction with estimated critical angle of 9/spl deg/ for 1 keV B/sup +/. For boron energy at 3.3 keV, wafer tilt of 8/spl deg/ remarkably suppressed the channeling. We also observed that 15 keV BF/sub 2/ implantation, as an equivalent energy of 3.3 keV B/sup +/, with tilt angle of 4/spl deg/ was sufficient for suppressing the channeling tail in dopant distribution due to additional suppression effect of channeling by implant-induced surface amorphization.read more
Citations
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Proceedings ArticleDOI
Channeling effects and quad chain implantation process optimization for low energy boron ions
TL;DR: In this article, the results of low energy boron implantation on a batch process ion implanter are presented showing that a channeling may play an important role and have an effect on the electrical characteristics of the implanted layer.
Journal ArticleDOI
Angle control requirements and solutions for enabling high aspect ratio structures
TL;DR: In this paper , the authors proposed a standardization of the term angle distribution to describe the standard deviation of angles in the ion beam at a measurement location with the qualifiers of Vertical and Horizontal to represent the components of the angle distribution in each of these directions.
References
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Book
Handbook of ion implantation technology
TL;DR: Ion implantation physics (JF Ziegler) Radiation damage and annealing in ion implantation (G Guylai) Channeling effects in ion implanation (R Simonton, AF Tasch) process simulation and ion implantations (H Glawischnig) Ion implantation applications in CMOS process technology as discussed by the authors.
Journal ArticleDOI
Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous Si
TL;DR: In this paper, the authors used secondary ion mass spectrometry (SIMS) and carrier profiles, measured by differential capacitancevoltage (C‐V) profiling, of boron and fluorine implanted as B, F, BF, or BF2 ions into random and channeling orientations of crystalline silicon, and into silicon amorphized by silicon ion implantation.
Journal ArticleDOI
A Mathematical Model of the Hydrodynamics and Gas‐Phase Reactions in Silicon LPCVD in a Single‐Wafer Reactor
TL;DR: In this article, a mathematical model has been developed for the fluid dynamics and the chemical reactions in silicon low pressure chemical vapor deposition (LPCVD) from silane in a single-wafer reactor.
Journal ArticleDOI
Formation of silicided, ultra-shallow junctions using low thermal budget processing
TL;DR: In this paper, the tradeoffs involved in alternative processes for the formation of ultra shallow junctions are described, where low energy implantation, preamorphization to eliminate channeling and low thermal budget processing are adequate to form junctions that are 0.1 to 0.3μm deep.
Journal ArticleDOI
Kinetics of damage production in silicon during self‐implantation
W. P. Maszara,G. A. Rozgonyi +1 more
TL;DR: In this paper, the authors investigated the damage which results from silicon self-implantation for the range of doses from 2×1014 to 1×1016 cm−2 for temperatures from 82 to 296 K for 150 and 300 kV implants.