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Journal ArticleDOI

Degradation behavior of 0.98-/spl mu/m strained quantum well InGaAs/AlGaAs lasers under high-power operation

M. Fukuda, +3 more
- 01 Feb 1994 - 
- Vol. 30, Iss: 2, pp 471-476
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TLDR
In this paper, the degradation behavior of 0.98/spl mu/m strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high power operations of more than 100 mW/facet.
Abstract
The degradation behavior of 0.98-/spl mu/m strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is mainly caused by the instability of the interface between the laser material (facet) and the antireflecting (AR) coating film. This phenomenon is associated with a high rate of facet oxidation and generation of instantaneous catastrophic optical damage (COD) at a relatively low optical output power in lasers without facet coating films. Throughout the clarification of those phenomena, the main reliability problem in 0.98-/spl mu/m strained QW lasers under high output power operation is clarified. >

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Citations
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Journal ArticleDOI

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

TL;DR: In this article, the authors demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on on-axis (001) GaP/Si substrates using molecular beam epitaxy.
Journal ArticleDOI

Improved catastrophic optical damage level from laser with nonabsorbing mirrors

TL;DR: In this paper, the authors demonstrate an improved catastrophic optical damage (COD) level from a ridge laser with nonabsorbing mirrors (NAMs) fabricated by quantum well intermixing.
Journal ArticleDOI

A new scheme of a lensed fiber employing a wedge-shaped graded-index fiber tip for the coupling between high-power laser diodes and single-mode fibers

TL;DR: In this paper, a novel lensed fiber employing a wedge-shaped graded-index fiber (GIF) was proposed and the characteristic of coupling loss as a function of the aspect ratio was numerically investigated.
Journal ArticleDOI

Optical strength of semiconductor laser materials

TL;DR: In this article, a review of optical damage in semiconductor laser materials is presented with compilation of empirical data, discussion on theoretical explanation and modeling of related processes, and a self-consistent model is considered for quantum-well lasers.
Journal ArticleDOI

Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser

TL;DR: In this paper, an improvement of catastrophic optical damage (COD) level for Al-free 0.98/spl mu/m ridge waveguide laser diodes (LDs) using the impurity induced layer disordering (IILD) process applied near the facets was investigated.
References
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Book

Heterostructure lasers

Journal ArticleDOI

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

TL;DR: In this paper, a simple theory of multiphonon emission (MPE) capture is presented in which vibrations of a single lattice coordinate modulate the depth of the potential well binding the carrier.
Book

Reliability and degradation of semiconductor lasers and LEDs

Mitsuo Fukuda
TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
Journal ArticleDOI

Catastrophic damage of AlxGa1−xAs double‐heterostructure laser material

TL;DR: In this paper, the authors carried out a detailed study of catastrophic degradation in DH laser material from which they reached two conclusions: local melting occurs and is due to intense nonradiative recombination of minority carriers at a cleaved surface or at a defect.
Journal ArticleDOI

Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes

TL;DR: In this paper, the authors show that λ/2.2.Al2O3 coatings can withstand up to 4-5 times the power density without significant heating and degradation and show that the resonator bulk material remains cold (ΔT < 5 K).
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