Patent
Deposition and planarizing methods and apparatus
TLDR
In this article, a layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer, and the deposited substance is redistributed by bombarding the layer with ions.Abstract:
A layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer. The deposited substance is redistributed by bombarding the layer with ions. The ion bombardment may be induced by applying low frequency RF excitation at about 5 KHz -1 MHz to the substrate.read more
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Patent
Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
Wiebe B. deBoer,Albert E. Ozias +1 more
TL;DR: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer as discussed by the authors.
Patent
Refractory metal capped low resistivity metal conductor lines and vias
TL;DR: In this paper, the authors defined the notion of a columnar structure of a metalization, which is defined as a low resistivity metal or alloy encapsulated by a refractory metal having a resistivity greater than that of the low-resilience metal and having a common composition, and all the sides of the plurality of sides being formed within the opening in the at least one dielectric layer.
Patent
Self-ionized and capacitively-coupled plasma for sputtering and resputtering
TL;DR: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) SPuttering are promoted, either together or alternately, in the same chamber.
Patent
Silicon scavenger in an inductively coupled RF plasma reactor
Kenneth S. Collins,Craig A. Roderick,John Trow,Chan-Lon Yang,Jerry Y. Wong,Jeffrey Marks,Peter R. Keswick,David W. Groechel,D. Pinson Ii Jay,Tetsuya Ishikawa,Lawrence C. Lei,Masato M. Toshima,Gerald Zheyao Yin +12 more
TL;DR: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome for etching metals, dielectrics and semiconductor materials as discussed by the authors.
Patent
Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
Kenneth S. Collins,Rice Michael R,John Trow,Douglas A. Buchberger,Eric Askarinam,Joshua Tsui,David W. Groechel,Raymond Hung +7 more
TL;DR: In this paper, a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as an hemisphere or dome, is described.
References
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Journal ArticleDOI
Calculation of Ion Bombarding Energy and Its Distribution in rf Sputtering
TL;DR: The energy distribution of bombarding ions in typical rf sputtering conditions has been calculated in this paper, where the Mathieu-type equations of motion of ions and electrons in the cathode-fall region are numerically integrated with various initial and boundary conditions.
Journal ArticleDOI
Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias
Yoshio Homma,Sukeyoshi Tsunekawa +1 more
TL;DR: In this paper, a new deposition technique, RF/dc sputtering with RF bias for metal, is developed and found to provide sufficient step coverage and moreover, planarity, in an application of the technique to aluminum film deposition, the existence of a resputtering effect was confirmed.
Patent
Thin film deposition apparatus and method
TL;DR: In this paper, the authors present an approach for the deposition of thin metal films on a surface of a workpiece as the workpiece is positioned adjacent to a deposition source and as the two parties rotate relative to each other about a first axis.
Journal ArticleDOI
Significant improvement in step coverage using bias sputtered aluminum
TL;DR: In this paper, the effects of target power, bias voltage, and anode voltage on bias current and step coverage were studied, and the low power delivered to the substrate under conditions for planarization is not consistent with a mechanism involving backputtering of aluminum; no significant change in the measured deposition rate was found when bias was introduced.
Patent
Sputtering apparatus and methods
TL;DR: In this paper, a method of depositing material onto an object in an ionization chamber having a shutter therein which has an object-obscuring portion comprising the step of confining particles of matter deposited on the object- obscuring portion of the shutter to such object-occuring portion while the object is being deposited with material.