Journal ArticleDOI
Deposition of GaAs Epitaxial Layers by Organometallic CVD Temperature and Orientation Dependence
D. H. Reep,Sorab K. Ghandhi +1 more
TLDR
In this article, a model for the epitaxial growth of by the organometallic process is proposed, based on these findings, and the growth rate is studied as a function of the growth parameters and substrate orientation, and is related to the decomposition of the two reactants trimethylgallium and arsine.Abstract:
Epitaxial layers of have been grown in an atmospheric organometallic CVD system, for a wide variety of gas phase reactant partial pressures and over a broad range of temperature (450°–1050°C). The growth rates for (100), , (110), (11l)Ga, and (11l)As substrates are reported as functions of temperature and gas composition. Three distinct temperature dependent regions of growth are identified, corresponding to a mid‐temperature mass transport limited range, a low‐temperature kinetic controlled regime, and a high‐temperature desorption limited region. The growth rate is studied as a function of the growth parameters and substrate orientation, and is related to the decomposition of the two reactants trimethylgallium and arsine. A model for the epitaxial growth of by the organometallic process is proposed, based on these findings.read more
Citations
More filters
Journal ArticleDOI
A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III-V nanowires
TL;DR: A review of the current understanding of particle-assisted nanowire growth can be found in this paper, where the authors give an overview of the historical development of the VLS model, with a discussion of potential growth mechanisms in particular the enhancement of growth rate in one dimension due to preferential deposition at the particle-wire interface.
Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Journal ArticleDOI
Mechanism of carbon incorporation in MOCVD GaAs
Thomas F. Kuech,E. Veuhoff +1 more
TL;DR: In this article, the incorporation of carbon in GaAs epitaxial layers, an important problem in MOCVD, has been studied over a wide range of experimental parameters: growth temperature, AsH 3 Ga(CH 3 ) 3 ratio, carrier gas, as well as substrate orientation.
Journal ArticleDOI
Complex flow phenomena in MOCVD reactors: I. Horizontal reactors
Harry K. Moffat,Klavs F. Jensen +1 more
TL;DR: In this paper, three-dimensional simulations of buoyancy driven flows in horizontal MOCVD reactors are presented along with corresponding deposition profiles for GaAs growth from TMGa and AsH 3 in H 2 at atmospheric pressure.
Journal ArticleDOI
Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD
TL;DR: In this paper, the authors measured the rate of decomposition of trimethylgallium (TMGa) and arsine by sampled gas infrared absorption spectroscopy, and the activation energy for decomposition in a quartz vessel is 34 kcal/mol.