Journal ArticleDOI
Design graphs for the intrinsic alpha cut-off parameters ωα, ωT and m of bipolar transistors
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TLDR
In this paper, the Kroemer equation giving the base transport factor in single-diffused transistors (constant aiding field in the base) is extended to cover double-differentiated transistors, and the base retarding held is found to have an important degradation effect on the cut-off frequencies.Abstract:
Design graphs are developed for the intrinsic alpha cut-off frequencies ωα, and ωT, and for the excess phase m of bipolar transistors. The Kroemer equation giving the base transport factor in single-diffused transistors (constant aiding field in the base) is extended to cover double-diffused transistors (constant aiding and retarding fields in the base). The base retarding held is found to have an important degradation effect on the cut-off frequencies: a 2 kT/q retarding voltage extended along 20% of the base width diminishes ωα,to about half the value corresponding to a single-diffused transistor. A practical design criterion is given for optimizing the impurity-concentration profiles of double-diffused transistors.read more
References
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Journal ArticleDOI
Diffused junction depletion layer calculations
H. Lawrence,R. M. Warner +1 more
TL;DR: In this article, the transition from graded to step junction behavior has been studied for diffused junctions in silicon and germanium as a function of reverse voltage and diffusion parameters for the gaussian and the complementary error function distributions.
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The high-injection-level operation of drift transistors
J. Lindmayer,C. Wrigley +1 more
TL;DR: In this article, the minority-charge distribution in the base region of the drift transistor by a one-dimensional theoretical model results in an Abel-type differential equation which has no analytical solution.
Journal ArticleDOI
Computer-aided transistor design, characterization, and optimization
TL;DR: In this article, a systematic and general method of computing a.c. and d.c characteristics of double-diffused junction transistors using major process parameters such as dimensions of the device, surface concentration, junction depth, diffusion time, temperature, and diffusion coefficient as a function of temperature and impurity concentration is described.
Journal ArticleDOI
Computation of bipolar transistor base parameters for general distribution of impurities in base
TL;DR: In this paper, the authors proposed a procedure by which dc and ac base gain parameters can be computed for general impurity distributions in the base, which consists of solving the current equation as series in the recombination time (1/τ).
Journal ArticleDOI
Calculation of intrinsic transport parameters of a double-diffused transistor
TL;DR: In this article, a double diffused transistor with Gaussian impurity distribution was analyzed by using a power-series method and the minority carrier-density distribution and frequency response were investigated, and it was shown that the transport factor and intrinsic frequency cutoff characteristics are related to the impurity diffusion length and impurity surface concentration.
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