Patent
Direct current-to-alternating current converter for photovoltaic power generation
TLDR
In this paper, a wide gap semiconductor having high mobility is used for the DC-DC converter FETs in the inverter system to enhance the efficiency of conversion of energy generated by solar cells.Abstract:
PROBLEM TO BE SOLVED: To provide an inverter system higher in energy conversion efficiency in an energy conversion system for photovoltaic power generation using solar cells or the like. SOLUTION: A wide gap semiconductor having high mobility is used for the DC-DC converter FETs in the inverter system. Thus, the efficiency of conversion of energy generated by solar cells is enhanced. COPYRIGHT: (C)2004,JPOread more
Citations
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Patent
Power converting apparatus
TL;DR: In this article, the smoothing capacitor is connected via a rectifier diode and a short-circuiting switch is set to an ON state only in each of shortcircuit ranges of which midpoint matches each of zero-crossing phases.
Patent
Power Conversion Device
TL;DR: In this article, a power conversion device includes a power switching circuit that supplies AC voltages generated between switching elements operating as upper and lower arms, and a control circuit that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements by a PWM method in a first operational region in which frequency of an AC power to be outputted is low.
Patent
Bridge circuits and their components
Honea James,Yifeng Wu +1 more
TL;DR: In this paper, a half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in one direction, in a second mode of operations of conducting substantial current in another direction through the channel, and in a third mode of operating in an opposite direction in the channel.
Patent
Inductive load power switching circuits
Honea James,Yifeng Wu +1 more
TL;DR: In this article, power switching circuits including an inductive load and a switching device are described, where the switches devices can be either low-side or high-side switches and some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.
Patent
Stable power supplying apparatus
TL;DR: In this article, a stable power supply apparatus consisting of a secondary battery, a bidirectional chopper circuit and a converter is presented, where the converter is formed of a wide-gap bipolar semiconductor device.
References
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Patent
Silicon carbide semiconductor device
TL;DR: In this article, the authors proposed to prevent leakage currents even under severe conditions such as a high temperature, large power, etc., by forming a first electrode onto the surface of an silicon carbide semiconductor layer.
Patent
Semiconductor switching element
TL;DR: In this article, the authors proposed a parallel-plate single-crystal silicon carbide semiconductor substrate with main surfaces on its top and bottom sides, a low-resistance n+-type drain layer 2 and an n--type drift layer 3 having higher resistance than the layer 2 has are laminated upon another.
Patent
Solar power generating device
Hirotada Higashihama,Hiroaki Koshin,Chukichi Mukai,Shinichiro Okamoto,Hisami Usui,Akira Yoshitake,晃 吉武,忠吉 向井,博昭 小新,信一郎 岡本,弘忠 東浜,久視 臼井 +11 more
TL;DR: In this article, a solar power generating device, which inputs a DC voltage from a solar battery, boosts the voltage by means of a booster section, and generates AC power to a system by converting the boosted DV voltage into an AC output by using a converter section.
Patent
Semiconductor element and fabrication thereof
TL;DR: In this paper, an amorphous AlXGa1-XN (0
Patent
Multi-layer structure semiconductor, device
TL;DR: In this article, a plurality of field effect transistors are layered in the thickness direction of a multi-layer film for a basic unit planarly juxtaposing and arranging one or the plurality of the field-effect transistors forming a gate electrode, a source electrode and a drain electrode on the surface of the semiconductor multilayer film.