One of the most remarkable phenomena in the early days of silicon technology was the “emitterpush” effect which causes an enhanced diffusion of dopants below regions with high phosphorus concentrations (see Section 5.8.3). To explain it, it was soon concluded that some sort of farranging “interaction particle” is needed. Since other impurities as well as extended defects could be excluded, this role was equally soon attributed to the intrinsic point defects introduced in Section 1.1.3. Indeed, intrinsic point defects play important roles in nearly all theories of impurity diffusion in silicon. Therefore, before proceeding with the latter in the next chapters, the properties of intrinsic point defects will be reviewed in the following.

Dislocation-Gold Interactions in FZ and CZ Silicon: The Role of Self-Interstitials

Intrinsic Point Defects

The general discussion of diffusion in Section 1.3 did not take into account the particular structure of silicon. The intention of this chapter is to discuss the atomistic processes associated with the diffusion of impurities and their interaction with intrinsic point defects in more detail. In Section 3.1, the various mechanisms for diffusion of impurities in silicon are introduced and discussed. Most important for impurities residing predominantly on substitutional sites are mechanisms in which they form mobile pairs with intrinsic point defects. The energetics of such pairs is discussed in detail in Section 3.2. Diffusion of mobile complexes can be described within the method of diffusion-reaction equations. The derivation of the basic equations and of special cases will be explained in Section 3.3. The most important special cases, pair diffusion, diffusion via the Frank-Turnbull mechanism, and diffusion via the kick-out mechanism are discussed in detail in the Sections 3.4 to 3.6.

Dislocation-Gold Interactions in FZ and CZ Silicon: The Role of Self-Interstitials

Citations

Intrinsic Point Defects

Impurity Diffusion in Silicon

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