Journal ArticleDOI
Disorder-induced resonant tunneling in planar quantum-dot nanostructures.
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This article is published in Physical Review B.The article was published on 1994-08-15. It has received 5 citations till now. The article focuses on the topics: Scanning tunneling spectroscopy & Resonant-tunneling diode.read more
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Journal ArticleDOI
Passivation and characterization of charge defects in ambipolar silicon quantum dots.
P. C. Spruijtenburg,S. V. Amitonov,Filipp Mueller,Wilfred G. van der Wiel,Floris A. Zwanenburg +4 more
TL;DR: The role of charge defects in the context of the formation of electrostatically defined quantum dots is shown and ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of 10 meV in both the positive and negative charge state.
Journal ArticleDOI
Passivation and characterization of charge defects in ambipolar silicon quantum dots
TL;DR: In this article, the role of charge defects in the context of the formation of electrostatically defined hole quantum dots is discussed, and a barrier array structure is introduced to probe defects at multiple locations in a single device.
Journal ArticleDOI
Three-dimensional self-consistent simulation of interface and dopant disorders in delta-doped grid-gate quantum-dot devices
TL;DR: In this paper, the influence of interface roughness and dopant disorder on the electronic and charging properties of a δ-doped Al1−xGaxAs/GaAs quantum-dot grid-gate device by computer simulation is investigated.
Journal ArticleDOI
Energy level broadening control in quantum dots by interfacial doping
TL;DR: In this paper, it was shown that doping the graded interface region of quantum dots can considerably reduce the broadening of their energy levels and that the presence of a Si donor in the middle of the interfaces can decrease their energy level broadening by as much as 20 µV.
Journal ArticleDOI
Energy level broadening due to size fluctuation in quantum dots
TL;DR: In this article, a model to describe size-fluctuation effects on the broadening of electron energy levels in spherical quantum dots is proposed, where the fluctuation is simulated by assuming that the quantum dots have graded interfaces with variable position α and thickness W.
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