Journal ArticleDOI
Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
TLDR
In this article, anomalous rectifying behavior has been observed in molybdenum/silicon Schottky barrier diodes produced by ion-beam sputter deposition of Mo on singlecrystal Si.Abstract:
Abnormal rectifying behavior has been observed in molybdenum/silicon Schottky barrier diodes produced by ion‐beam sputter deposition of Mo on single‐crystal Si. Rectifying, rather than ohmic contacts are obtained on p‐type Si, while ohmic behavior is seen on n‐type Si. These results are contrary to the usual results reported in the literature, and are shown to be caused by ion‐beam surface damage of Si. The damage does not simply cause a surface layer of high‐recombination velocity, but rather tends to bend the Si band edges downwards, irrespective of the Si conductivity type.read more
Citations
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Journal ArticleDOI
Microstructure of Ti/Al ohmic contacts for n-AlGaN
TL;DR: In this article, the microstructure of Al/Ti ohmic contacts to AlGaN/GaN heterostructure field effect transistor structures was evaluated using transmission electron microscopy.
Journal ArticleDOI
Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN
Dong-Feng Wang,Feng Shiwei,Changzhi Lu,Abhishek Motayed,Muzar Jah,S. Noor Mohammad,Kenneth A. Jones,Lourdes Salamanca-Riba +7 more
TL;DR: In this article, a metallization scheme was developed for obtaining low ohmic contacts to n-GaN with a low contact resistance, where the metal contact is a Ti/Al/Ti/Au composite with layers that are respectively 30, 100, 30, and 30 nm thick.
Journal ArticleDOI
Effect of antimony ion implantation on Al‐silicon Schottky diode characteristics
S. Ashok,Bantval Jayant Baliga +1 more
TL;DR: Shallow (≲100 A) antimony ion implantation on n-type silicon is shown to reduce the effective barrier height on Al Schottky diodes formed on the implanted surface irrespective of postimplant annealing as discussed by the authors.
Journal ArticleDOI
Modification of Schottky barriers in silicon by reactive ion etching with NF3
TL;DR: In this paper, reaction ion etching of silicon with NF3 gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy.
Journal ArticleDOI
Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation
W. S. Lau,S. J. Fonash +1 more
TL;DR: In this paper, the authors obtained undoped zinc oxide films with a best resistivity of ∼1.1 × 10-3 Ω cm, a carrier density of ∼ 1.5 × 1020 cm−3 and a mobility of ∼38 cm2V−1s −1.
References
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Journal ArticleDOI
Control of Schottky barrier height using highly doped surface layers
TL;DR: In this article, it was shown that the effective height of a Schottky barrier can be controlled over a wide range using highly doped surface layers formed by low energy ion implantation.
Journal ArticleDOI
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon
TL;DR: In this article, it was found that the kind and amount of damage produced in silicon following Ar+ ion bombardment at 1.0 keV and the annealing properties of the damage depend strongly on the temperature at which the sputtering is done in the range 25-800°C.
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The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
TL;DR: In this paper, the properties of d.c. sputtered molybdenum-silicon Schottky diodes are described and a model is proposed which is capable of explaining most features of the observed C-V and I-V characteristics.
Journal ArticleDOI
Sputtered oxide/indium phosphide junctions and indium phosphide surfaces
TL;DR: In this paper, it was shown that sputtered indium-tin oxide (ITO)/InP solar cells with large lattice mismatch have the same efficiency as CdS/InP junctions with good lattice match.
Journal ArticleDOI
Chemical mechanisms of Schottky barrier formation
TL;DR: In this paper, the Schottky barrier formation can be characterized by a twofold process, local charge redistribution plus surface space charge transfer, each determined by the degree of interface chemical reactivity.