Journal ArticleDOI
Effect of nonparabolicity on Ohmic magnetoresistance in semiconductors
Vijay K. Arora,Mahmoud Jaafarian +1 more
Reads0
Chats0
TLDR
In this article, the effect of nonparabolicity of the conduction band of semiconductors was studied in the framework of the Arora-Peterson density-matrix formalism.Abstract:
The effect of nonparabolicity of the conduction band of $n\ensuremath{-}\mathrm{InSb}$ type semiconductors is studied in the framework of the Arora-Peterson density-matrix formalism. To exhibit clearly the effect of nonparabolicity, only the case of elastic electron-acoustic-phonon scattering is considered. Numerical results are presented both for parabolic and nonparabolic models. The nonparabolicity enhances the magnetoresistance, the effect being larger for larger magnetic fields. The Hall coefficient decreases slightly with the increasing magnetic field.read more
Citations
More filters
Book ChapterDOI
The properties and applications of the Hg 1−x Cd x Te alloy system
Ralf Dornhaus,Günter Nimtz +1 more
Journal ArticleDOI
On the effective electron mass in strained layer superlattices of non-parabolic semiconductors under strong magnetic quantization
Kamakhya P. Ghatak,B. Mitra +1 more
TL;DR: In this paper, an attempt is made to study the effective electron mass in strained layer superlattices of non-parabolic semiconductors with graded structures under sirong magnetic quantization and to compare the same with the bulk specimens of the constituent materials, by formulating the appropriate magneto-dispersion laws.
Journal ArticleDOI
Geometric manipulation of the high-field linear magnetoresistance in InSb epilayers on GaAs(001)
Will R. Branford,A. Husmann,Stuart A. Solin,Steven Clowes,T. Zhang,Y. Bugoslavsky,Lesley F. Cohen +6 more
TL;DR: In this paper, the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs was studied and the modification of the MR when processed into a set of geometries were quite subtle.
Journal ArticleDOI
A simple theoretical analysis of the effective electron mass in heavily doped III-V semiconductors in the presence of band-tails
TL;DR: In this paper, the authors studied the effective electron mass at the Fermi-level on the basis of a newly formulated electron energy spectrum for heavily doped non-parabolic III-V semiconductors forming band-tails, taking n-InSb as an example.
Journal ArticleDOI
Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields
TL;DR: In this paper, an attempt was made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derived E-k dispersion relation of the conduction electrons.