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Effect of thermal treatment on the hall mobility in thin vanadium films.

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This article is published in Thin Solid Films.The article was published on 1969-08-01. It has received 2 citations till now. The article focuses on the topics: Vanadium & Annealing (metallurgy).

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Some transport properties of transition metal films

TL;DR: In this article, the experimental measurements reported on the electrical resistivity, temperature coefficient of resistance and thermoelectric power of nineteen transition metal films have been reviewed, and theoretical models proposed so far to analyse these experimental results have been briefly summarized.
References
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Journal ArticleDOI

A theory of the irreversible electrical resistance changes of metallic films evaporated in vacuum

Vladimir Vand
TL;DR: In this article, the decay of lattice distortions is investigated and a characteristic function F0 expressing the law of distribution of the decay energies is formulated, calculated from measurements available and found to be of the expected order, and the shape of this function and the position of its maxima depend on the structure of the support and the thickness of the film.
Journal ArticleDOI

Temperature Coefficients of Resistance of Metallic Films in the Temperature Range 25° to 600°C

TL;DR: The temperature coefficients of resistance (TCR) of films of sputtered Au, Ir, Mo, Ni, Pd, Pt, Rh, Ta, and W, of evaporated Al, Cr, Ti, and Zr, and of the alloy films Pt-Au, Pt-Ir, and Pt-Ni have been measured in vacuo over the temperature range 25° to 600°C; the film thickness range was 75 to 2000 A..
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Transport Properties of Sputtered Vanadium Dioxide Thin Films

TL;DR: In this article, conductivity, Hall coefficient, and thermoelectric power data for reactively sputtered vanadium dioxide thin films both above and below the metal-semiconductor transition were investigated.
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