Journal ArticleDOI
Effect of thickness on the thermoelectric properties of PbS thin films
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TLDR
In this article, a non-monotonic dependence of the thermoelectric properties of PbS epitaxial films grown on (001)KCl substrates and covered with an EuS protective layer was detected at room temperature.About:
This article is published in Thin Solid Films.The article was published on 2003-01-01. It has received 31 citations till now. The article focuses on the topics: Thermoelectric effect & Seebeck coefficient.read more
Citations
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Enhancement of the thermoelectric properties in nanoscale and nanostructured materials
TL;DR: In this article, the authors introduce the theory behind thermoelectric materials and details the predicted and demonstrated enhancements of ZT in nanoscale and nanostructured thermocomponent materials, including thin films and superlattices, nanowires and nanotubes.
Journal ArticleDOI
Synthesis, structural, optical, electrical and thermoluminescence properties of chemically deposited PbS thin films
TL;DR: In this paper, the optical properties of PbS thin films with deposition times of 100, 115, 130 and 145 min were investigated using X-ray diffraction and morphological properties of the films were investigated by scanning electron microscopy.
Journal ArticleDOI
Quantum size effects in n-PbTe∕p-SnTe∕n-PbTe heterostructures
E. I. Rogacheva,O. N. Nashchekina,A. V. Meriuts,S.G. Lyubchenko,M. S. Dresselhaus,G. Dresselhaus +5 more
TL;DR: In this article, the dependence of the thermoelectric properties of n-PbTe, p-SnTe, and n-pbTe heterostructures on the SnTe quantum well width (dSnTe=0.5-6.0nm) at fixed PbTe barrier layers thicknesses were studied.
Journal ArticleDOI
Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds
Sergey V. Ovsyannikov,Vladimir V. Shchennikov,Yuri S. Ponosov,S. V. Gudina,Vera G Guk,Eugenii P. Skipetrov,V. E. Mogilenskikh +6 more
TL;DR: In this article, the thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1−xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.
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Oscillatory behaviour of the transport properties in PbTe quantum wells
TL;DR: In this paper, the dependence of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2-200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature.
References
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Book
Introduction to percolation theory
Dietrich Stauffer,Amnon Aharony +1 more
TL;DR: In this paper, a scaling solution for the Bethe lattice is proposed for cluster numbers and a scaling assumption for cluster number scaling assumptions for cluster radius and fractal dimension is proposed.
Book
Introduction to percolation theory
Dietrich Stauffer,Amnon Aharony +1 more
TL;DR: In this article, a scaling solution for the Bethe lattice is proposed for cluster numbers and a scaling assumption for cluster number scaling assumptions for cluster radius and fractal dimension is proposed.
Journal ArticleDOI
Effect of quantum-well structures on the thermoelectric figure of merit.
TL;DR: In this article, the authors proposed to use quantum-well superlattice structures to enhance the performance of thermoelectric coolers and showed that layering has the potential to increase significantly the figure of merit of a highly anisotropic material.
Journal ArticleDOI
Thermoelectric figure of merit of a one-dimensional conductor.
TL;DR: Calculations show that this approach has the potential to achieve a significant increase in the figure of merit over both the bulk value and the calculated two-dimensional superlattice values.
Electronic properties of doped semiconductors
Boris I Shklovskii,A. L. Efros +1 more
TL;DR: In the last fifteen years, there has been a noticeable shift towards impure semiconductors -a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.