Journal ArticleDOI
Effect of water in ambient air on hysteresis in pentacene field-effect transistors containing gate dielectrics coated with polymers with different functional groups
Se Hyun Kim,Hoichang Yang,Sang Yoon Yang,Kipyo Hong,Danbi Choi,Chanwoo Yang,Dae Sung Chung,Chan Eon Park +7 more
TLDR
In this article, the effect of water in ambient air on the hysteresis phenomena of pentacene field effect transistors with polymer/SiO2 gate dielectrics was investigated.About:
This article is published in Organic Electronics.The article was published on 2008-10-01. It has received 87 citations till now. The article focuses on the topics: Gate dielectric & Pentacene.read more
Citations
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Journal ArticleDOI
Current versus gate voltage hysteresis in organic field effect transistors
Martin Egginger,Siegfried Bauer,Reinhard Schwödiauer,Helmut Neugebauer,Niyazi Serdar Sariciftci +4 more
TL;DR: In this paper, the authors provide an overview of the physical effects that cause hysteresis and discuss the importance of such effects in OFETs in a comparative manner, in order to provide a comprehensive picture of the hystresis phenomena in organic field effect transistors.
PatentDOI
Photolithographic patterning of organic electronic devices
TL;DR: In this article, a method of patterning an organic device includes depositing a first organic functional layer over a device substrate to form a first intermediate structure, the first functional layer having a first function such as hole transport or electron transport.
Journal ArticleDOI
Engineering of the dielectric–semiconductor interface in organic field-effect transistors
TL;DR: In this article, the authors give an overview of the recent progress in the engineering of the dielectric-semiconductor interface in OFETs and present novel applications of the interface for achieving multifunctions.
Journal ArticleDOI
Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications
TL;DR: In this article, a chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane-terminated polystyrene (PS) solution.
Journal ArticleDOI
Ammonia gas sensor based on pentacene organic field-effect transistor
TL;DR: In this paper, bottom contact organic field effect transistors (OFETs) were created using pentacene as an active layer and polymerthylmethacrylate (PMMA) as an insulator.
References
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Journal ArticleDOI
General observation of n-type field-effect behaviour in organic semiconductors
Lay-Lay Chua,Lay-Lay Chua,Jana Zaumseil,Jui Fen Chang,Eric C.W. Ou,Peter K. H. Ho,Peter K. H. Ho,Henning Sirringhaus,Richard H. Friend +8 more
TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Book
Adhesion and Adhesives: Science and Technology
TL;DR: In this article, Deryaguin et al. proposed a diffusion theory for adhesives and showed that it can be used to model interfacial diffusion and surface tension gradients, as well as the influence of surface roughness.
Journal ArticleDOI
Electronic sensing of vapors with organic transistors
B. Crone,B. Crone,Ananth Dodabalapur,Alan Gelperin,Luisa Torsi,Luisa Torsi,Howard E. Katz,Andrew J. Lovinger,Zhenan Bao +8 more
TL;DR: In this article, organic thin-film transistors have been shown to have suitable properties for use in gas sensors, such sensors possess sensitivity and reproducibility in recognizing a range of gaseous analytes.
Journal ArticleDOI
The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics
TL;DR: In this paper, the effects of the surface energy of gate dielectrics on pentacene morphology and the electrical properties of FETs are reported, using surface energy-controllable poly(imide-siloxane)s as gate-dielectric layers.
Journal ArticleDOI
Electron traps and hysteresis in pentacene-based organic thin-film transistors
TL;DR: In the absence of charge storage or slow polarization in the gate dielectric, the hysteresis in the currentvoltage (I−V) characteristics of pentacene-based organic thin-film transistors (OTFTs) is dominated by trapped electrons in the semiconductor as mentioned in this paper.