Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
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In this article, the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III-V semiconductor light emitting diode (LED) was demonstrated.Abstract:
We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III–V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED.read more
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Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Challenges for semiconductor spintronics
TL;DR: In this article, the authors focus on advances towards the development of hybrid devices that can perform logic, communications and storage within the same materials technology, and take advantage of spin coherence to sidestep some limitations on information manipulation.
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Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
Xiaohua Lou,Christoph Adelmann,Scott A. Crooker,E. S. Garlid,Jianjie Zhang,K. S. Madhukar Reddy,Soren D. Flexner,Chris Palmstrom,Paul A. Crowell +8 more
TL;DR: In this paper, the authors demonstrate a fully electrical scheme for spin injection, transport and detection in a single device consisting of a lateral semiconducting channel with two ferromagnetic contacts, one serving as a source of spin-polarized electrons and the other as a detector.
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Probing momentum distributions in magnetic tunnel junctions via hot-electron decay
TL;DR: In this article, the authors investigated the tunnel momentum distribution in a magnetic tunnel junction by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure.
References
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Tunneling between ferromagnetic films
TL;DR: In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.
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Electrical spin injection in a ferromagnetic semiconductor heterostructure
TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.
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Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
TL;DR: In this paper, the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals were calculated, and it was shown that for a typical device geometry, the degree of spin polarization of the current is limited to less than 0.1% only.
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Injection and detection of a spin-polarized current in a light-emitting diode
TL;DR: In this article, the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner to inject spin-polarized charge into a non-magnetic semiconductor device.
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Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
TL;DR: In this article, the authors show that tunnel contacts can dramatically increase spin injection and solve the problem of the mismatch in the conductivities of a ferromagnetic (FM) metal and a semiconductor microstructure.