Journal ArticleDOI
Tunneling between ferromagnetic films
TLDR
In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.About:
This article is published in Physics Letters A.The article was published on 1975-09-08. It has received 3365 citations till now. The article focuses on the topics: Spin polarization & Tunnel magnetoresistance.read more
Citations
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Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
The emergence of spin electronics in data storage
Claude Chappert,Claude Chappert,Albert Fert,Albert Fert,Frédéric Nguyen Van Dau,Frédéric Nguyen Van Dau +5 more
TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
Journal ArticleDOI
Simple rules for the understanding of Heusler compounds
TL;DR: Heusler compounds as discussed by the authors are a remarkable class of intermetallic materials with 1:1:1 or 2:1-1 composition comprising more than 1500 members, and their properties can easily be predicted by the valence electron count.
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Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
T. Miyazaki,Nobuki Tezuka +1 more
TL;DR: In this article, a giant magnetoresistance ratio of 30% at 4.2 K and 18% at 300 K was observed for the first time in an Fe/Al2O3/Fe junction.
References
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Journal ArticleDOI
SPIN POLARIZATION OF ELECTRONS TUNNELING FROM FILMS OF Fe, Co, Ni, AND Gd.
P. M. Tedrow,R. Meservey +1 more
TL;DR: In this paper, the spin polarization of electrons tunneling from films of Fe, Co, Ni, and Gd to superconducting Al films is determined from conductance measurements.
Journal ArticleDOI
Spin-Dependent Tunneling into Ferromagnetic Nickel
P. M. Tedrow,R. Meservey +1 more
TL;DR: In this paper, the spin-dependent tunneling density of superconducting aluminum and ferromagnetic nickel is determined by a polarization of the magnetic moments of the Ni current carriers parallel to the applied field.
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Exchange Model of Zero-Bias Tunneling Anomalies
TL;DR: Exchange model of zero bias tunneling anomalies, discussing Hamiltonian, interference magnetic scattering and metal junctions was discussed in this paper, where the Hamiltonian was used to model the tunneling anomaly.
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Localized magnetic states and fermi-surface anomalies in tunneling
TL;DR: In this paper, the authors provide a physical model for the interactions proposed by Appelbaum which he used to explain Fermi-surface anomalies in tunneling and evaluate these interactions and show why the anomalous conductance need not be small compared to the direct tunneling.
Journal ArticleDOI
The effect of interactions on electron tunnelling via exchange scattering
TL;DR: In this article, the effect of interactions between the magnetic moments which exchange scatter tunnelling electrons is found to depress the conductance below the logarithmic temperature and voltage behaviour which is found for junctions with low concentrations of magnetic moments.