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Journal ArticleDOI

Tunneling between ferromagnetic films

M. Julliere
- 08 Sep 1975 - 
- Vol. 54, Iss: 3, pp 225-226
TLDR
In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.
About
This article is published in Physics Letters A.The article was published on 1975-09-08. It has received 3365 citations till now. The article focuses on the topics: Spin polarization & Tunnel magnetoresistance.

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Citations
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Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
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The emergence of spin electronics in data storage

TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
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Simple rules for the understanding of Heusler compounds

TL;DR: Heusler compounds as discussed by the authors are a remarkable class of intermetallic materials with 1:1:1 or 2:1-1 composition comprising more than 1500 members, and their properties can easily be predicted by the valence electron count.
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Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

TL;DR: In this article, a giant magnetoresistance ratio of 30% at 4.2 K and 18% at 300 K was observed for the first time in an Fe/Al2O3/Fe junction.
References
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Journal ArticleDOI

SPIN POLARIZATION OF ELECTRONS TUNNELING FROM FILMS OF Fe, Co, Ni, AND Gd.

TL;DR: In this paper, the spin polarization of electrons tunneling from films of Fe, Co, Ni, and Gd to superconducting Al films is determined from conductance measurements.
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Spin-Dependent Tunneling into Ferromagnetic Nickel

TL;DR: In this paper, the spin-dependent tunneling density of superconducting aluminum and ferromagnetic nickel is determined by a polarization of the magnetic moments of the Ni current carriers parallel to the applied field.
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Exchange Model of Zero-Bias Tunneling Anomalies

TL;DR: Exchange model of zero bias tunneling anomalies, discussing Hamiltonian, interference magnetic scattering and metal junctions was discussed in this paper, where the Hamiltonian was used to model the tunneling anomaly.
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Localized magnetic states and fermi-surface anomalies in tunneling

TL;DR: In this paper, the authors provide a physical model for the interactions proposed by Appelbaum which he used to explain Fermi-surface anomalies in tunneling and evaluate these interactions and show why the anomalous conductance need not be small compared to the direct tunneling.
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The effect of interactions on electron tunnelling via exchange scattering

TL;DR: In this article, the effect of interactions between the magnetic moments which exchange scatter tunnelling electrons is found to depress the conductance below the logarithmic temperature and voltage behaviour which is found for junctions with low concentrations of magnetic moments.
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