Bernd Beschoten

TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.

TL;DR: It is shown that the quality of CVD-grown graphene depends critically on the used transfer process, and an advanced transfer technique is reported on that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene.

TL;DR: In this paper, a model consisting of a ferromagnetic layer coupled to a diluted, antiferromagnetic layers extensive Monte Carlo simulations are performed and it is shown that a variety of typical effects associated with exchange bias, such as positive bias, temperature, and time dependencies as well as the dependence on the thickness of the antiferramagnetic layer can be explained within their model.

TL;DR: It is shown that the observed 2D line width contains valuable information on strain variations in graphene on length scales far below the laser spot size, that is, on the nanometre-scale.

TL;DR: In this article, Monte Carlo simulations of a simple model of a ferromagnetic layer on a diluted antiferromagnet show exchange bias and explain qualitatively its dilution and temperature dependence.