Journal ArticleDOI
Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures
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In this article, the first observation of electroabsorption in GaAs/GaAlAs multiple quantum well structures was reported, and the authors were able to induce Stark shifts for room-temperature exciton resonances of ∼10 meV for applied field ∼1.6×104 V/cm in a sample with 96−A GaAs layers, giving large changes in optical absorption (e.g., a factor of 5 or ∼4×103 cm−1 increase).Abstract:
We report the first observation of electroabsorption in GaAs/GaAlAs multiple quantum well structures. We have been able to induce Stark shifts for room‐temperature exciton resonances of ∼10 meV for applied field ∼1.6×104 V/cm in a sample with 96‐A GaAs layers, giving large changes in optical absorption (e.g., a factor of 5 or ∼4×103 cm−1 increase). This should permit optical modulators with micron path lengths and potentially very fast operation.read more
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Journal ArticleDOI
Electric field dependence of optical absorption near the band gap of quantum-well structures.
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Journal ArticleDOI
Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device
David A. B. Miller,Daniel S. Chemla,T. C. Damen,A. C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
TL;DR: In this article, a self-electro-optic effect device (SEED) was proposed, which uses the same GaAs/GaAlAs multiple quantum well material simultaneously as an optical detector and modulator.
Journal ArticleDOI
Frequency chirping in external modulators
Fumio Koyama,Kenichi Iga +1 more
TL;DR: In this paper, a general formula is given that expresses frequency chirping in some types of external intensity modulators, such as the loss modulator, directional-coupler-type modulator and total-internal-reflection type modulator.
Journal ArticleDOI
High‐speed optical modulation with GaAs/GaAlAs quantum wells in a p‐i‐n diode structure
Thomas H. Wood,C. A. Burrus,David A. B. Miller,Daniel S. Chemla,Theodoor C. Damen,Arthur C. Gossard,W. Wiegmann +6 more
TL;DR: In this paper, a new type of high-speed optical modulator is proposed and demonstrated, where an electric field is applied perpendicular to GaAs/GaAlAs multiple quantum well layers using a diode doping structure of 4μm total thickness.
Journal ArticleDOI
A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
TL;DR: In this paper, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.
References
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Journal ArticleDOI
Quantum States of Confined Carriers in Very Thin Al x Ga 1 − x As -GaAs- Al x Ga 1 − x As Heterostructures
TL;DR: In this article, a simple rectangular potential well with a depth of ≈088ΔE g, where ΔE g is the difference in the semiconductor energy gaps is defined.
Journal ArticleDOI
Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
David A. B. Miller,Daniel S. Chemla,D. J. Eilenberger,Peter W. Smith,A. C. Gossard,W. T. Tsang +5 more
TL;DR: The first measurements of optical absorption saturation in GaAs/GaAlAs multiple quantum well (MQW) structures at room temperature near the heavy hole exciton peak were reported in this article.
Journal ArticleDOI
Observation of the excited level of excitons in GaAs quantum wells
TL;DR: In this article, the light and heavy-hole two-dimensional exciton term values are determined directly from the excitation spectra of GaAs-${\mathrm{Al}}_{x}{\mathrm-Ga}}_{1\ensuremath{-}x}\mathrm {As}$ heterostructures with GaAs well widths from 42 to 145 \AA{}.
Book
Introduction to Atomic Spectra
TL;DR: In this article, the magnetic energy of an atom in an arbitrary stationa ry state is calculated using the Zeeman effect and compared with the observed patterns of the magnetic field.
Journal ArticleDOI
Electroabsorption in GaAs and its application to waveguide detectors and modulators
TL;DR: In this article, the electroabsorption coefficient of GaAs has been measured in uniform electric fields at wavelengths from 0.91 to 0.93 μm using Schottky barrier contacts on low-loss GaAs waveguides consisting of high purity epitaxial GaAs grown on heavily doped GaAs substrates.