Journal ArticleDOI
Electrodeposited SnS film for photovoltaic applications
TLDR
In this article, the authors used X-ray diffraction (XRD) and Fourier transform infrared (FTIR) measurements to characterize the SnS film and determined the conductivity type of the sample using the Hall effect measurement.About:
This article is published in Vacuum.The article was published on 2014-09-01. It has received 41 citations till now. The article focuses on the topics: Direct and indirect band gaps & Band gap.read more
Citations
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Journal ArticleDOI
Review on the photocatalytic activity of various composite catalysts
D. Sudha,P. Sivakumar +1 more
TL;DR: In this paper, the role of synthetic pathways on the structure and activity of composite catalyst derived from TiO2, CdS, WO3, SnS and ZnO were analyzed.
Journal ArticleDOI
Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films
TL;DR: In this article, the ultrasonic waves were applied to synthesize ultrasound-assisted electrodeposited SnS thin film, which led to formation of two dimensional (2D) SnS.
Journal ArticleDOI
SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques
TL;DR: In this article, chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques were used to synthesize SnS thin films.
Journal ArticleDOI
In situ growth of SnS absorbing layer by reactive sputtering for thin film solar cells
Lianbo Zhao,Yunxiang Di,Chang Yan,Fangyang Liu,Fangyang Liu,Zhu Cheng,Liangxing Jiang,Xiaojing Hao,Yanqing Lai,Jie Li +9 more
TL;DR: In this paper, an in situ growth process via reactive sputtering was employed to fabricate SnS thin films and the effect of growth temperature on the properties of prepared films was investigated to obtain phase-pure SnS.
Journal ArticleDOI
Nanostructured SnS1−xTex thin films: Effect of Te concentration and physical properties
TL;DR: In this article, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), photoluminescence (PL) and UV-Vis analysis were used to investigate the optical properties of materials.
References
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Book
Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Book
Semiconductor Devices: Physics and Technology
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI
III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum
G. K. Williamson,R. E. Smallman +1 more
TL;DR: In this article, two basic equations are derived for deducing the dislocation density in powdered materials from the particle size and strain breadth measured from the Debye-Schemer spectrum.