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Journal ArticleDOI

Electron states in α-quartz (SiO2)

M. Schluter, +1 more
- 01 Jan 1977 - 
- Vol. 21, Iss: 4, pp 381-384
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TLDR
In this paper, the pseudopotential method was used to calculate the valence electron states of α-quartz SiO 2 using photo-emission and UV-absorption data.
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This article is published in Solid State Communications.The article was published on 1977-01-01. It has received 22 citations till now. The article focuses on the topics: Valence electron & Electron beam processing.

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Journal ArticleDOI

The electronic structure of SiO2: A review of recent spectroscopic and theoretical advances

TL;DR: Experimental and theoretical progress in understanding the electronic structure of SiO2 is critically reviewed in this article, where relatively basic introductions to both the experimental and theoretical methods are provided, as well as a review of some of the most interesting results.
Journal ArticleDOI

Silicon dioxide and the chalcogenide semiconductors; similarities and differences

N.F. Mott
- 01 Jul 1977 - 
TL;DR: In this article, the authors examine current hypotheses about the optical and electrical properties of amorphous chalcogenide semiconductors, and examine whether they can be extended to explain some of the properties of silicon dioxide.
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Orbital interactions in phyllosilicates: perturbations of an idealized two-dimensional, infinite silicate frame

TL;DR: In this paper, it was shown that rotation and tilting distortions of the ∞ 2 [Si2O 5 2− ] frame have little influence on orbital interactions within the frame.
Journal ArticleDOI

X-ray emission bands and electronic structure of crystalline and vitreous silica (SiO2)

TL;DR: In this paper, the silicon X-ray K emission bands of the crystalline polymorphs of silica (SiO2): alpha-quartz, beta-cristobalite, beta -tridymite, coesite (all having 4:2 coordination), stishovite (6:3 coordination) and of the vitreous forms Infrasil and Suprasil (a-SiO 2).
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X-ray spectroscopic investigation of the electronic structure of α-quartz and stishovite (SiO2)

TL;DR: In this paper, the silicon K and L2,3 X-ray emission bands of stishovite (tetragonal SiO2, 6:4 co-ordination) and α-quartz (hexagonal Si O2, 4:2 co-coordination) were compared with theoretical band structure calculations and good overall agreement was found.
References
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Journal ArticleDOI

X-Ray Photoemission Spectra of Crystalline and Amorphous Si and Ge Valence Bands

TL;DR: In this paper, high-resolution x-ray photoelectron spectra of the total valence bands of crystalline and amorphous silicon and germanium are reported.
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Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures

TL;DR: In this article, a self-consistent pseudopotential method was used to calculate the electronic structure of several Si (111) surface models, including Haneman's (2\ifmmode\times\else\texttimes\fi{}1) reconstructed surface model.
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The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements

TL;DR: In this article, the interband gap of 9.0 eV in amorphous SiO2 was shown to be insensitive to band edge selection rules, and a gap of 8.9 ± 0.2 eV was seen in photoinjection measurements.
Journal ArticleDOI

Photoemission Measurements of the Valence Levels of Amorphous Si O 2

TL;DR: The complete valence band in amorphous Si${\mathrm{O}}_{2}$ has been examined by photoelectron spectroscopy at photon energies of 21.2, 26.9, 40.8, and 1486.6 eV as mentioned in this paper.
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